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Observation of a thermally enhanced magnetoresistance in NiFe
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A thermally enhanced magnetoresistance (ThMR) was designed and obtained by simultaneously applying charge and heat currents to a NiFe thin film. From the measurement we observed that the magnetoresistance value was as high as -22600% when the input charge current and applied temperature gradient was 0.966 μA and 2.5 °C/mm, respectively. This ThMR can be controllable by adjusting the relative values of the input charge and heat currents. On increasing the input charge current from 0.85 to 1.05 μA by fixing the temperature gradient at 2.5 °C/mm, the ThMR first increased from 9% to 183% and then decreased from -259% to -13%, at intervals of ∼0.96 μA. This can be explained by the spin-dependent transport phenomenon i.e., scattering induced sign difference between magnetoresistance and magnetothermopower in NiFe.
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