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The magneto-Hall difference and the planar extraordinary Hall balance
1.S. Basu, D. Pavlidis, T. Theis, K. Bergman, and J. Candelaria, “Report to the National Science Foundation on The Workshop for Energy Efficient Computing,” April 14-15 (2015).
2.W. J. Gallagher and S. S. P. Parkin, “Development of the magnetic tunnel junction MRAM at IBM: From first junctions to a 16-Mb MRAM demonstrator chip,” IBM J. Res. Dev. 50, 5–24 (2006).
5.S. Ikeda, J. Hayakawa, Y. Ashizawa, Y. M. Lee, K. Miura, H. Hasegawa, M. Tsunoda, F. Matsukura, and H. Ohno, “Tunnel magnetoresistance of 604% at 300 K by suppression of Ta diffusion in CoFeB/MgO/CoFeB pseudo-spin-valves annealed at high temperature,” Appl. Phys. Lett. 93, 082508 (2008).
6.S. L. Zhang, Y. Liu, L. J. Collins-McIntyre, T. Hesjedal, J. Y. Zhang, S. G. Wang, and G. H. Yu, “Extraordinary Hall balance,” Sci. Rep. 3, 2087 (2013).
7.S. L. Zhang, A. A. Baker, J.-Y. Zhang, G. H. Yu, S. G. Wang, and T. Hesjedal, “Universal Magnetic Hall Circuit Based on Paired Spin Heterostructures,” Adv. Electron. Mater. 1, 1400054 (2015).
8.S. L. Zhang, L. J. Collins-McIntyre, J.-Y. Zhang, S. G. Wang, G. H. Yu, and T. Hesjedal, “Nonvolatile full adder based on a single multivalued Hall junction,” SPIN 3, 1350008 (2013).
9.S. L. Zhang, J.-Y. Zhang, A. A. Baker, S. G. Wang, G. H. Yu, and T. Hesjedal, “Three dimensional magnetic abacus memory,” Sci. Rep. 4, 6109 (2014).
12.S. L. Zhang, J. Teng, J. Y. Zhang, Y. Liu, J. W. Li, G. H. Yu, and S. G. Wang, “Large enhancement of the anomalous Hall effect in Co/Pt multilayers sandwiched by MgO layers,” Appl. Phys. Lett. 97, 222504 (2010).
13.J. Moritz, B. Rodmacq, S. Auffret, and B. Dieny, “Extraordinary Hall effect in thin magnetic films and its potential for sensors, memories and magnetic logic applications,” J. Phys. D: Appl. Phys. 41, 135001 (2008).
15.C. L. Canedy, X. W. Li, and Gang Xiao, “Large magnetic moment enhancement and extraordinary Hall effect in Co/Pt superlattices,” Phys. Rev. B 62, 508–519 (2000).
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The extraordinary Hall balance (EHB) is a general device concept that harnesses the net extraordinary Hall effect (EHE) arising from two independent magnetic layers, which are electrically in parallel. Different EHB behavior can be achieved by tuning the strength and type of interlayer coupling, i.e., ferromagnetic or antiferromagnetic of varying strength, allowing for logic and memory applications. The physics of the EHE in such a multilayered systems, especially the interface-induced effect, will be discussed. A discrepancy between the magnetization and the Hall effect, called the magneto-Hall difference (MHD) is found, which is not expected in conventional EHE systems. By taking advantage of the MHD effect, and by optimizing the materials structure, magnetoresistance ratios in excess of 40,000% can be achieved at room-temperature. We present a new design, the planar EHB, which has the potential to achieve significantly larger magnetoresistance ratios.
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