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The extraordinary Hall balance (EHB) is a general device concept that harnesses the net extraordinary Hall effect (EHE) arising from two independent magnetic layers, which are electrically in parallel. Different EHB behavior can be achieved by tuning the strength and type of interlayer coupling, i.e., ferromagnetic or antiferromagnetic of varying strength, allowing for logic and memory applications. The physics of the EHE in such a multilayered systems, especially the interface-induced effect, will be discussed. A discrepancy between the magnetization and the Hall effect, called the magneto-Hall difference (MHD) is found, which is not expected in conventional EHE systems. By taking advantage of the MHD effect, and by optimizing the materials structure, magnetoresistance ratios in excess of 40,000% can be achieved at room-temperature. We present a new design, the planar EHB, which has the potential to achieve significantly larger magnetoresistance ratios.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd