No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices
10.A. X. Levander, T. Tong, K. M. Yu, J. Suh, D. Fu, R. Zhang, H. Lu, W. J. Schaff, O. Dubon, W. Walukiewicz, D. G. Cahill, and J. Wu, Appl. Phys. Lett. 98, 012108 (2011).
17.J. Piprek, Semiconductor Optoelectronic Devices (Academic, San Diego, 2003).
19.J.-H. Bahk, Z. Bian, M. Zebarjadi, J. M. O. Zide, H. Lu, D. Xu, J. P. Feser, G. Zeng, A. Majumdar, A. C. Gossard, A. Shakouri, and J. E. Bowers, Phys. Rev. B 81, 235209 (2010).
20.A. Bejan and A. D. Allan, Heat Transfer Handbook (Wiley, New York, 2003).
24.G. Zeng, J. M. O. Zide, W. Kim, J. E. Bowers, A. C. Gossard, Z. Bian, Y. Zhang, A. Shakouri, S. L. Singer, and A. Majumdar, J. Appl. Phys. 101, 034502 (2007).
27.G. Koblmüller, C. S. Gallinat, S. Bernardis, J. S. Speck, G. D. Chern, E. D. Readinger, H. Shen, and M. Wraback, Appl. Phys. Lett. 89, 071902 (2006).
29.M. Himmerlich, A. Knübel, R. Aidam, L. Kirste, A. Eisenhardt, S. Krischok, J. Pezoldt, P. Schley, R. Goldhahn, and G. Koblmüller, J. Appl. Phys. 113, 033501 (2013).
30.N. Miller, J. W. Ager III, H. M. Smith III, M. A. Mayer, K. M. Yu, E. E. Haller, W. Walukiewicz, W. J. Schaff, C. S. Gallinat, G. Koblmüller, and J. S. Speck, J. Appl. Phys. 107, 113712 (2010).
31.N. Miller, E. E. Haller, G. Koblmüller, C. S. Gallinar, J. S. Speck, W. J. Schaff, M. E. Hawkridge, K. M. Yu, and J. W. Ager III, Phys. Rev. B 84, 075315 (2011).
34.D. G. Cahill, W. K. Ford, K. E. Goodson, G. D. Mahan, A. Majumdar, H. J. Maris, R. Merlin, and S. R. Phillpot, J. Appl. Phys. 93, 793 (2003).
40.X. Wang, S. Liu, N. Ma, L. Feng, G. Chen, F. Xu, N. Tang, S. Huang, K. J. Chen, S. Zhou, and B. Shen, Appl. Phys. Exp. 5, 015502 (2012).
Article metrics loading...
The thermoelectricproperties of n-type InGaN alloys with high In-content and InN/InGaN thin film superlattices(SL) grown by molecular beam epitaxy are investigated. Room-temperature measurements of the thermoelectricproperties reveal that an increasing Ga-content in ternary InGaN alloys (0 < x(Ga) < 0.2) yields a more than 10-fold reduction in thermal conductivity (κ) without deteriorating electrical conductivity (σ), while the Seebeck coefficient (S) increases slightly due to a widening band gap compared to binary InN. Employing InN/InGaN SLs (x(Ga) = 0.1) with different periods, we demonstrate that confinement effects strongly enhance electron mobility with values as high as ∼820 cm2/V s at an electron density ne of ∼5×1019 cm−3, leading to an exceptionally high σ of ∼5400 (Ωcm)−1. Simultaneously, in very short-period SL structures S becomes decoupled from ne, κ is further reduced below the alloy limit (κ < 9 W/m-K), and the power factor increases to 2.5×10−4 W/m-K2 by more than a factor of 5 as compared to In-rich InGaN alloys. These findings demonstrate that quantum confinement in group-III nitride-based superlattices facilitates improvements of thermoelectricproperties over bulk-like ternary nitride alloys.
Full text loading...
Most read this month