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1.
1.S. Chowdhury, Phys. Status Solidi A 212, 1066 (2015).
http://dx.doi.org/10.1002/pssa.201431810
2.
2.K. A. Jones, T. P. Chow, M. Wraback, M. Shatalov, Z. Sitar, F. Shahedipour, K. Udwary, and G. S. Tompa, J. Mater. Sci. 50, 3267 (2015).
http://dx.doi.org/10.1007/s10853-015-8878-3
3.
3.S. Arulkumaran, T. Egawa, S. Matsui, and H. Ishikawa, Appl. Phys. Lett. 86, 123503 (2005).
http://dx.doi.org/10.1063/1.1879091
4.
4.A. Dadgar, Phys. Status Solidi B 252, 1063 (2015).
http://dx.doi.org/10.1002/pssb.201451656
5.
5.F. Semond, Mater. Res. Soc. 40, 412 (2015).
http://dx.doi.org/10.1557/mrs.2015.96
6.
6.S. Fujita, Jpn. J. Appl. Phys. 54, 030101 (2015).
http://dx.doi.org/10.7567/JJAP.54.030101
7.
7.J. J. Freedsman, T. Egawa, Y. Yamaoka, Y. Yano, A. Ubukata, T. Tabuchi, and K. Matsumoto, Appl. Phys. Express 7, 041003 (2014).
http://dx.doi.org/10.7567/APEX.7.041003
8.
8.D. Christy, T. Egawa, Y. Yano, H. Tokunaga, H. Shimamura, Y. Yamaoka, A. Ubukata, T. Tabuchi, and K. Matsumoto, Appl. Phys. Express 6, 026501 (2013).
http://dx.doi.org/10.7567/APEX.6.026501
9.
9.H. Ishikawa, G. -Y. Zhao, N. Nakada, T. Egawa, T. Jimbo, and M. Umeno, Jpn. J. Appl. Phys. 38, L492 (1999).
http://dx.doi.org/10.1143/JJAP.38.L492
10.
10.T. Egawa, IEDM Tech. Dig. 613 (2012).
11.
11.S. Demirtas, J. Joh, and J. A. del Alamo, Microelectron. Reliab. 50, 758 (2010).
http://dx.doi.org/10.1016/j.microrel.2010.02.016
12.
12.A. F. Wilson, A. Wakejima, and T. Egawa, Appl. Phys. Express 6, 116601 (2013).
http://dx.doi.org/10.7567/APEX.6.116601
13.
13.D. Marcon, T. Kauerauf, F. Medjdoub, J. Das, M. Van Hove, P. Srivastava, K. Cheng, M. Leys, R. Mertens, S. Decoutere, G. Meneghesso, E. Zanoni, and G. Borghs, IEDM Tech. Dig. 472 (2010).
14.
14. Klein, J. Biskupek, U. Kaiser, K. Forghani, S. B. Thapa, and F. Scholz, J. Phys. Conf. Ser. 209, 012018 (2010).
http://dx.doi.org/10.1088/1742-6596/209/1/012018
15.
15.O. Klein, J. Biskupek, K. Forghani, F. Scholz, and U. Kaiser, J. Cryst. Growth 324, 63 (2011).
http://dx.doi.org/10.1016/j.jcrysgro.2011.03.050
16.
16.D. M. Follstaedt, S. R. Lee, A. A. Allerman, and J. A. Floro, J. Appl. Phys. 105, 083507 (2009).
http://dx.doi.org/10.1063/1.3087515
17.
17.H. Marchand, L. Zhao, N. Zhang, B. Moran, R. Coffie, U. K. Mishra, J. S. Speck, S. P. DenBaars, and J. A. Freitas, J. Appl. Phys. 89, 7846 (2001).
http://dx.doi.org/10.1063/1.1372160
18.
18.C. D. Lee, A. Sagar, R. M. Feenstra, C. K. Inoki, T. S. Kuan, W. L. Sarney, and L. Salamanca-Riba, Appl. Phys. Lett. 79, 3428 (2001).
http://dx.doi.org/10.1063/1.1421091
19.
19.M. Agrawal, N. Dharmarasu, K. Radhakrishnan, and L. Ravikiran, Thin Solid Films 520, 7109 (2012).
http://dx.doi.org/10.1016/j.tsf.2012.08.010
20.
20.M. Tanaka, M. Terauchi, and T. Kaneyama, J. Electron Microsc. 40, 211 (1991).
21.
21.M. Tanaka, M. Terauchi, and T. Kaneyama, Convergent-Beam Electron Diffraction II (JEOL-Maruzen, Tokyo, 1988), p. 160.
22.
22.D. Cherns and J. P. Morniroli, Ultramicroscopy 53, 167 (1994).
http://dx.doi.org/10.1016/0304-3991(94)90007-8
23.
23.Y. Sugawara, M. Nakamori, Y. Yao, Y. Ishikawa, K. Danno, H. Suzuki, T. Bessho, S. Yamaguchi, K. Nishikawa, and Y. Ikuhara, Appl. Phys. Express 5, 081301 (2012).
http://dx.doi.org/10.1143/APEX.5.081301
24.
24.S. Onda, H. Watanabe, Y. Kito, H. Kondo, H. Uehigashi, N. Hosokawa, Y. Hisada, K. Shiraishi, and H. Saka, Philos. Mag. Lett. 93, 439 (2013).
http://dx.doi.org/10.1080/09500839.2013.798047
25.
25.S. L. Selvaraj, T. Suzue, and T. Egawa, IEEE Electron Device Lett. 30, 587 (2009).
http://dx.doi.org/10.1109/LED.2009.2018288
26.
26.T. Ohnishi, H. Koike, T. Ishitani, S. Tomimatsu, K. Umemura, and T. Kamino, in Proc. 25th Int. Symp. for Testing and Failure Analysis (1999), p. 449.
27.
27.H. Sasaki, T. Matsuda, T. Kato, T. Muroga, Y. Iijima, T. Saitoh, F. Iwase, Y. Yamada, T. Izumi, Y. Shiohara, and T. Hirayama, J. Electron Microsc. 53, 497 (2004).
http://dx.doi.org/10.1093/jmicro/dfh067
28.
28.M. Tanaka, M. Terauchi, and K. Tsuda, Convergent-Beam Electron Diffraction III (JEOL-Maruzen, Tokyo, 1994), p. 178.
29.
29.O. Ambacher, F. Freudenberg, R. Dimitrov, H. Angerer, and M. Stutzmann, Jpn. J. Appl. Phys. 37, 2416 (1998).
http://dx.doi.org/10.1143/JJAP.37.2416
30.
30.F. Wu, H. Wang, S. Byrappa, B. Raghothamachar, M. Dudley, E. K. Sanchez, D. Hansen, R. Drachev, S. G. Mueller, and M. J. Loboda, Maert. Sci. Forum 717-720, 343 (2012).
http://dx.doi.org/10.4028/www.scientific.net/MSF.717-720.343
31.
31.F. Wu, M. Dudley, H. Wang, S. Byrappa, S. Sun, B. Raghothamachar, E. K. Sanchez, G. Chung, D. Hansen, S. G. Mueller, and M. J. Loboda, Mater. Sci. Forum 740-742, 217 (2013).
http://dx.doi.org/10.4028/www.scientific.net/MSF.740-742.217
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/content/aip/journal/adva/6/4/10.1063/1.4948451
2016-04-27
2016-12-08

Abstract

The behavior of dislocations in a GaN layer grown on a 4-inch Si(111) substrate with an AlGaN/AlN strained layer superlattice using horizontal metal-organic chemical vapor deposition was observed by transmission electron microscopy. Cross-sectional observation indicated that a drastic decrease in the dislocation density occurred in the GaN layer. The reaction of a dislocation (=1/3[-211-3]) and anothor dislocation ( =1/3[-2113]) to form one dislocation ( =2/3[-2110]) in the GaN layer was clarified by plan-view observation using weak-beam dark-field and large-angle convergent-beam diffraction methods.

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