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1.
1.A. L. Rogach, A. Kornowski, M. Gao et al., J. Phys. Chem. B 103, 3065 (1999).
http://dx.doi.org/10.1021/jp984833b
2.
2.Y. L. Soo, Z. H. Ming, S. W. Huang, Y. H. Kao, R. N. Bhargava, and D. Gallagher, Phys. Rev. B 50, 7602 (1994).
http://dx.doi.org/10.1103/PhysRevB.50.7602
3.
3.A. P. Alivisatos, Science 271, 933 (1996).
http://dx.doi.org/10.1126/science.271.5251.933
4.
4.R. N. Bhargava, D. Gallagher, X. Hong, and A. Nurmikko, Phys. Rev. Lett. 72, 416 (1994).
http://dx.doi.org/10.1103/PhysRevLett.72.416
5.
5.N. Karar, F. Singh, and B. R. Mehta, J Appl. Phys. 95, 656 (2004).
http://dx.doi.org/10.1063/1.1633347
6.
6.L. Wang, X. Xu, and X. Yuan, Journal of Luminescence 130, 137 (2010).
http://dx.doi.org/10.1016/j.jlumin.2009.07.036
7.
7.S. Horoz, Q. Dai, F.S. Maloney, B. Yakami, J.M. Pikal, X. Zhang, J. Wang, W. Wang, and J. Tang, Phys. Rev. Applied 3, 024011 (2015).
http://dx.doi.org/10.1103/PhysRevApplied.3.024011
8.
8.H. Yang, S. Santra, and P. Holloway, Journal of Nanoscience and Nanotechnology 5, 1364 (2005).
http://dx.doi.org/10.1166/jnn.2005.308
9.
9.W. Chen, J. O. Malm, V. Zwiller, R. Wallenberg, and J. O. Bovin, Journal of Applied Physics 89, 2671 (2001).
http://dx.doi.org/10.1063/1.1344582
10.
10.W.Q. Peng, S.C. Qu, G.W. Cong, and Z.G. Wong, J. Cryst. Growth 282, 179 (2005).
http://dx.doi.org/10.1016/j.jcrysgro.2005.05.005
11.
11.I. Yu, T. Isobe, and M. Senna, J. Phys. Chem. Solids 57, 373 (1996).
http://dx.doi.org/10.1016/0022-3697(95)00285-5
12.
12.K. Jayanthi, S. Chawla, H. Chander, and Haranath D. Haranath, Cryst. Res. Technol. 42, 976 (2007).
http://dx.doi.org/10.1002/crat.200710950
13.
13.W. Chen, J.O. Malm, V. Zwiller, Y. Huang, S. Liu, R. Wallenberg, J.O. Bovin, and L. Samuelson, Phys. Rev. B 61, 11021 (2000).
http://dx.doi.org/10.1103/PhysRevB.61.11021
14.
14.L. S. Man, G. H. Qing, Z.Z. Hua, L.F. Qi1, and W. Z. Guo, Chinese Physics Letters 17, 609 (2000).
http://dx.doi.org/10.1088/0256-307X/17/8/023
15.
15.S. J. Pearton, C. R. Abernathy, M. E. Overberg, G. T. Thaler, D. P. Norton, N. Theodoropoulou, A. F. Hebard, Y.D. Park, F. Ren, J. Kim, and L. A. Boatner, Journal of Applied Physics 93, 1 (2003).
http://dx.doi.org/10.1063/1.1517164
16.
16.S. A. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, S. von Molna, M. L. Roukes, A. Y. Chtchelkanova, and D. M. Treger, Science 294, 1488 (2001).
http://dx.doi.org/10.1126/science.1065389
17.
17.Y. Geng, L.D. Zhang, G.Z. Wang, T. Xie, Y.G. Zhang, and G.W. Meng, Appl. Phys. Lett. 84, 2157 (2004).
http://dx.doi.org/10.1063/1.1687985
18.
18.S. Lee, D. Song, D. Kim, J. Lee, S. Kim, I. Y. Park, and Y.D. Choi, Materials Letters 58, 342 (2004).
http://dx.doi.org/10.1016/S0167-577X(03)00483-X
19.
19.S.J. Xu, S.J. Chua, B. Liu, L.M. Gan, C.H. Chew, and G.Q. Xu, Applied physics letters 73, 478 (1998).
http://dx.doi.org/10.1063/1.121906
20.
20.G. Ren, Z. Lin, C. Wang, W. Liu1, J. Zhang, F. Huang, and J. Liang, Nanotechnology 18, 035705 (2007).
http://dx.doi.org/10.1088/0957-4484/18/3/035705
21.
21.S. Sambasivam, D.P. Joseph, J.G. Lin, and C. Venkateswaran, Journal of Solid State Chemistry 182, 2598 (2009).
http://dx.doi.org/10.1016/j.jssc.2009.07.015
22.
22.P. Vinotha Boorana Lakshmi, K. Sakthi Raj, and K. Ramachandran, Cryst. Res. Tech. 44, 153 (2009).
http://dx.doi.org/10.1002/crat.200800271
23.
23.M Ragam, G Kalaiselvan, S Arumugam, N Sankar, and K Ramachandran, Journal of Alloys and Compounds 541, 222 (2012).
http://dx.doi.org/10.1016/j.jallcom.2012.07.024
24.
24.T. Kang, J. Sung, W. Shim, H. Moon, J. Cho, Y. Jo, W. Lee, and B. Kim, J. Phys. Chem. C 113, 5352 (2009).
http://dx.doi.org/10.1021/jp808433b
25.
25.S. Kumar, S. Kumar, and N. K. Verma, Journal of Materials Science: Materials in Electronics 22, 523 (2011).
http://dx.doi.org/10.1007/s10854-010-0171-2
26.
26.B Bhattacharjee, D. Ganguli, K. Iakoubovskii, A. Stesmans, and S. Chaudhuri, Bulletin of Materials Science 25, 175 (2002).
http://dx.doi.org/10.1007/BF02711150
27.
27.Y. Li, C. Cao, and Z. Chen, Chem. Phys. Lett. 517, 55 (2011).
http://dx.doi.org/10.1016/j.cplett.2011.09.048
28.
28.S. Horoz, L. Liu, Q. Dai, B. Yakami, J.M. Pikal, W. Wang, and J. Tang, Appl. Phys. Lett. 101, 223902 (2012).
http://dx.doi.org/10.1063/1.4768706
29.
29.R Kripal, A.K. Gupta, S.K. Mishta, K. Srivastava, A. C. Pandey, and S.G. Prakash, Spectrochimica Acta Part A. 76, 523 (2010).
http://dx.doi.org/10.1016/j.saa.2010.04.018
30.
30.D. D. Papakonstantinou, J. Huang, and P. Lianos, Journal of Materials Science Letters 17, 1571 (1998).
http://dx.doi.org/10.1023/A:1006543205507
31.
31.S. C. Qu, W. H. Zhou, F. Q. Liu, N. F. Chen, Z. G. Wang, H. Y. Pan, and D. P. Yu, Appl. Phys. Lett. 80, 3605 (2002).
http://dx.doi.org/10.1063/1.1478152
32.
32.J. Chen, L. Lu, and W. Wang, J. Phys. Chem. C 116, 10841 (2012).
http://dx.doi.org/10.1021/jp301770n
33.
33.H. Yang, L. Yua, L. Shen, and L. Wang, Materials Letters 58, 1172 (2004).
http://dx.doi.org/10.1016/j.matlet.2003.09.009
34.
34.K. Swiatek, M. Godlewski, D. Hommel, and H. Hartman, Phys. Rev. B 42, 3628 (1990).
http://dx.doi.org/10.1103/PhysRevB.42.3628
35.
35.D.A. Reddy, G. Murali, R.P. Vijayalakshmi, B.K. Reddy, and B. Sreedhar, Cryst. Res. Technol 46, 731 (2011).
http://dx.doi.org/10.1002/crat.201100146
36.
36.W. Z. Xiao, L. L. Wang, Q. Y. Rong, G. Xiao, and B. Meng, Journal of Applied Physics 115, 213905 (2014).
http://dx.doi.org/10.1063/1.4881501
37.
37.Z. Zhang, U. Schwingenschlogl, and I.S. Roqan, RSC Adv. 4, 50759 (2014).
http://dx.doi.org/10.1039/C4RA06237J
38.
38.G. Zhu, S. Zhang, Z. Xu, J. Ma, and X. Shen, J. Am. Chem. Soc. 133, 15605 (2011).
http://dx.doi.org/10.1021/ja2049258
39.
39.A. Zunger and S. Lany, Physics 3, 53 (2010).
http://dx.doi.org/10.1103/Physics.3.53
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/content/aip/journal/adva/6/4/10.1063/1.4948510
2016-04-27
2016-12-11

Abstract

Eu-doped ZnSquantum dots(QDs) have been synthesized by wet-chemical method and found to form in zinc blende (cubic) structure. Both Eu2+ and Eu3+dopedZnS can be controllably synthesized. The Eu2+dopedZnSQDs show broad photoluminescence emission peak around 512 nm, which is from the Eu2+ intra-ion transition of 4f6d1 – 4f7, while the Eu3+doped samples exhibit narrow emission lines characteristic of transitions between the 4f levels. The investigation of the magnetic properties shows that the Eu3+doped samples exhibit signs of ferromagnetism, on the other hand, Eu2+doped samples are paramagnetic of Curie-Weiss type. The incident photon to electron conversion efficiency is increased with the Eu doping, which suggests the QDsolar cell efficiency can be enhanced by Eu doping due to widened absorption windows. This is an attractive approach to utilize benign and environmentally friendly wide band gap ZnSQDs in solar cell technology.

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