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A two-step growth method is proposed for the fabrication of highly-oriented SbTe and related superlattice films using sputtering. We report that the quality and grain size of SbTe as well as GeTe/SbTesuperlattice films strongly depend on the thickness of the room-temperature deposited and subsequently by annealing at 523 K SbTe seed layer. This result may open up new possibilities for the fabrication of two-dimensional electronic devices using layered chalcogenides.


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