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1.
1.A. K. Geim and I. V. Grigorieva, Nature 499, 419 (2013).
http://dx.doi.org/10.1038/nature12385
2.
2.S. Z. Butler, S. M. Hollen, L. Cao, Y. Cui, J. A. Gupta, H. R. Gutiérrez, T. F. Heinz, S. S. Hong, J. Huang, A. F. Ismach, E. Johnston-Halperin, M. Kuno, V. V. Plashnitsa, R. D. Robinson, R. S. Ruoff, S. Salahuddin, J. Shan, L. Shi, M. G. Spencer, M. Terrones, W. Windl, and J. E. Goldberger, ACS Nano 7, 2898 (2013).
http://dx.doi.org/10.1021/nn400280c
3.
3.P. Miro, M. Audiffred, and T. Heine, Chem. Soc. Rev. 43, 6537 (2014).
http://dx.doi.org/10.1039/C4CS00102H
4.
4.H. Zhang, C. X. Liu, X. L. Qi, X. Dai, Z. Fang, and S. C. Zhang, Nat. Phys. 5, 438 (2009).
http://dx.doi.org/10.1038/nphys1270
5.
5.D. Hsieh, Y. Xia, D. Qian, L. Wray, F. Meier, J. H. Dil, J. Osterwalder, L. Patthey, A. V. Fedorov, H. Lin, A. Bansil, D. Grauer, Y. S. Hor, R. J. Cava, and M. Z. Hasan, Phys. Rev. Lett. 103, 146401 (2009).
http://dx.doi.org/10.1103/PhysRevLett.103.146401
6.
6.Y. L. Chen, J. G. Analytis, J. H. Chu, Z. K. Liu, S. K. Mo, X. L. Qi, H. J. Zhang, D. H. Lu, X. Dai, Z. Fang, S. C. Zhang, I. R. Fisher, Z. Hussain, and Z. X. Shen, Science 325, 178 (2009).
http://dx.doi.org/10.1126/science.1173034
7.
7.M. Z. Hasan and C. L. Kane, Rev. Mod. Phys 82, 3045 (2010).
http://dx.doi.org/10.1103/RevModPhys.82.3045
8.
8.Y. Jiang, Y. Wang, M. Chen, Z. Li, C. Song, K. He, L. Wang, X. Chen, X. Ma, and Q.-K. Xue, Phys. Rev. Lett. 108, 016401 (2012).
http://dx.doi.org/10.1103/PhysRevLett.108.016401
9.
9.M. Wuttig and N. Yamada, Nat. Mater. 6, 824 (2007).
http://dx.doi.org/10.1038/nmat2009
10.
10.B. Poudel, Q. Hao, Y. Ma, Y. Lan, A. Minnich, B. Yu, X. Yan, D. Wang, A. Muto, D. Vashaee, X. Chen, J. Liu, M. S. Dresselhaus, G. Chen, and Z. Ren, Science 320, 634 (2008).
http://dx.doi.org/10.1126/science.1156446
11.
11.R. E. Simpson, P. Fons, A. V. Kolobov, T. Fukaya, M. Krbal, T. Yagi, and J. Tominaga, Nat. Nanotech. 6, 501 (2011).
http://dx.doi.org/10.1038/nnano.2011.96
12.
12.J. Tominaga, R. E. Simpson, P. Fons, and A. V. Kolobov, Appl. Phys. Lett. 99, 152105 (2011).
http://dx.doi.org/10.1063/1.3651275
13.
13.D. Bang, H. Awano, J. Tominaga, A. V. Kolobov, P. Fons, Y. Saito, K. Makino, T. Nakano, M. Hase, Y. Takagaki, A. Giussani, R. Calarco, and S. Murakami, Sci. Rep. 4, 5727 (2014).
http://dx.doi.org/10.1038/srep05727
14.
14.J. Tominaga, A. V. Kolobov, P. Fons, T. Nakano, and S. Murakami, Adv. Mat. Interfaces 1, 1300027 (2014).
15.
15.J. Tominaga, A. V. Kolobov, P. J. Fons, X. Wang, Y. Saito, T. Nakano, M. Hase, S. Murakami, J. Herfort, and Y. Takagaki, Sci. Technol. Adv. Mater. 16, 014402 (2015).
http://dx.doi.org/10.1088/1468-6996/16/1/014402
16.
16.G. Cunningham, M. Lotya, C. S. Cucinotta, S. Sanvito, S. D. Bergin, R. Menzel, M. S. Shaffer, and J. N. Coleman, ACS Nano 6, 3468 (2012).
http://dx.doi.org/10.1021/nn300503e
17.
17.H. Wang, L. Yu, Y.-H. Lee, W. Fang, A. Hsu, P. Herring, M. Chin, M. Dubey, L.-J. Li, J. Kong, and T. Palacios, 2012 IEEE International Electron Devices Meeting (IEDM), 12, 4.6.1 (2012).
18.
18.Y. Shi, W. Zhou, A.-Y. Lu, W. Fang, Y.-H. Lee, A. L. Hsu, S. M. Kim, K. K. Kim, H. Y. Yang, L.-J. Li, J.-C. Ilrobo, and J. Kong, Nano Lett. 12, 2784 (2012).
http://dx.doi.org/10.1021/nl204562j
19.
19.J. E. Boschker, J. Momand, V. Bragaglia, R. Wang, K. Perumal, A. Giussani, B. J. Kooi, H. Riechert, and R. Calarco, Nano Lett. 14, 3534 (2014).
http://dx.doi.org/10.1021/nl5011492
20.
20.J. Momand, R. Wang, J. E. Boschker, M. A. Verheijen, R. Calarco, and B. J. Kooi, Nanoscale 7, 19136 (2015).
http://dx.doi.org/10.1039/C5NR04530D
21.
21.J. E. Boschker, L. A. Galves, T. Flissikowski, J. M. J. Lopes, H. Riechert, and R. Calarco, Sci. Rep. 5, 18079 (2015).
http://dx.doi.org/10.1038/srep18079
22.
22.Y. Saito, P. Fons, A. V. Kolobov, and J. Tominaga, Phys. Stat. Sol. (b) 252, 2151 (2015).
http://dx.doi.org/10.1002/pssb.201552335
23.
23.H. D. Li, Z. Y. Wang, X. Kan, X. Guo, H. T. He, Z. Wang, J. N. Wang, T. L. Wong, N. Wang, and M. H. Xie, New J. Phys. 12, 103038 (2010).
http://dx.doi.org/10.1088/1367-2630/12/10/103038
24.
24.N. Bansal, Y. S. Kim, E. Edrey, M. Brahlek, Y. Horibe, K. Iida, M. Tanimura, G.-H. Li, T. Feng, H.-D. Lee, T. Gustafsson, E. Andrei, and S. Oh, Thin Solid Films 520, 224 (2011).
http://dx.doi.org/10.1016/j.tsf.2011.07.033
25.
25.Z. Y. Wang, H. D. Li, X. Guo, W. K. Ho, and M. H. Xie, J. Cryst. Growth 334, 96 (2011).
http://dx.doi.org/10.1016/j.jcrysgro.2011.08.029
26.
26.A. A. Taskin, S. Sasaki, K. Segawa, and Y. Ando, Phys. Rev. Lett. 109, 066803 (2012).
http://dx.doi.org/10.1103/PhysRevLett.109.066803
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/content/aip/journal/adva/6/4/10.1063/1.4948536
2016-04-28
2016-09-25

Abstract

A two-step growth method is proposed for the fabrication of highly-oriented SbTe and related superlattice films using sputtering. We report that the quality and grain size of SbTe as well as GeTe/SbTesuperlattice films strongly depend on the thickness of the room-temperature deposited and subsequently by annealing at 523 K SbTe seed layer. This result may open up new possibilities for the fabrication of two-dimensional electronic devices using layered chalcogenides.

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