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1.
1.X.-L. Qi and S.-C. Zhang, Rev. Mod. Phys. 83, 1057 (2011).
http://dx.doi.org/10.1103/RevModPhys.83.1057
2.
2.C. L. Kane and E. J. Mele, Phys. Rev. Lett. 95, 146802 (2005).
http://dx.doi.org/10.1103/PhysRevLett.95.146802
3.
3.Y. Ni, Z. Zhang, I. C. Nlebedim, R. L. Hadimani, G. Tuttle, and D. C. Jiles, J.Appl. Phys. 117, 17C748 (2015).
http://dx.doi.org/10.1063/1.4918560
4.
4.J. E. Moore, Nature 464, 194 (2010).
http://dx.doi.org/10.1038/nature08916
5.
5.Y. Ni, Z. Zhang, I. C. Nlebedim, R. L. Hadimani, and D. C. Jiles, IEEE Trans. Mag. 51, 1 (2015).
http://dx.doi.org/10.1109/TMAG.2015.2444378
6.
6.D.-X. Qu, Y. S. Hor, J. Xiong, R. J. Cava, and N. P. Ong, Science 329, 821 (2010).
http://dx.doi.org/10.1126/science.1189792
7.
7.H. Zhang, C.-X. Liu, X.-L. Qi, X. Dai, Z. Fang, and S.-C. Zhang, Nat. Phys. 5, 438 (2009).
http://dx.doi.org/10.1038/nphys1270
8.
8.L. Plucinski, G. Mussler, J. Krumrain, A. Herdt, S. Suga, D. Grützmacher, and C. M. Schneider, Appl. Phys. Lett. 98, 222503 (2011).
http://dx.doi.org/10.1063/1.3595309
9.
9.J. Zhang, C.-Z. Chang, Z. Zhang, J. Wen, X. Feng, K. Li, M. Liu, K. He, L. Wang, X. Chen, Q.-K. Xue, X. Ma, and Y. Wang, Nat. Commun. 2, 574 (2011).
http://dx.doi.org/10.1038/ncomms1588
10.
10.K. Wang, Y. Liu, W. Wang, N. Meyer, L. H. Bao, L. He, M. R. Lang, Z. G. Chen, X. Y. Che, K. Post, J. Zou, D. N. Basov, K. L. Wang, and F. Xiu, Appl. Phys. Lett. 103, 031605 (2013).
http://dx.doi.org/10.1063/1.4813903
11.
11.H. Peng, W. Dang, J. Cao, Y. Chen, D. Wu, W. Zheng, H. Li, Z.-X. Shen, and Z. Liu, Nat. Chem. 4, 281 (2012).
http://dx.doi.org/10.1038/nchem.1277
12.
12.Y. Liu, Y. Y. Li, S. Rajput, D. Gilks, L. Lari, P. L. Galindo, M. Weinert, V. K. Lazarov, and L. Li, Nat. Phys. 10, 294 (2014).
http://dx.doi.org/10.1038/nphys2898
13.
13.C. Zhang, X. Yuan, K. Wang, Z.-G. Chen, B. Cao, W. Wang, Y. Liu, J. Zou, and F. Xiu, Adv. Mater. 26, 7110 (2014).
http://dx.doi.org/10.1002/adma.201402299
14.
14.L. Bao, W. Wang, N. Meyer, Y. Liu, C. Zhang, K. Wang, P. Ai, and F. Xiu, Sci. Rep. 3, 2391 (2013).
15.
15.S. Shimizu, R. Yoshimi, T. Hatano, K. S. Takahashi, A. Tsukazaki, M. Kawasaki, Y. Iwasa, and Y. Tokura, Phys. Rev. B 86, 045319 (2012).
http://dx.doi.org/10.1103/PhysRevB.86.045319
16.
16.H. Pal, V. Yudson, and D. Maslov, Phys. Rev. B 85, 085439 (2012).
http://dx.doi.org/10.1103/PhysRevB.85.085439
17.
17.S. Hikami, A. I. Larkin, and Y. Nagaoka, Prog. Theor. Phys. 63, 707 (1980).
http://dx.doi.org/10.1143/PTP.63.707
18.
18.H. Steinberg, J. B. Laloë, V. Fatemi, J. S. Moodera, and P. Jarillo-Herrero, Phys. Rev. B 84, 233101 (2011).
http://dx.doi.org/10.1103/PhysRevB.84.233101
19.
19.B. L. Altshuler, A. G. Aronov, and D. E. Khmelnitsky, J. Phys. C 15, 7367 (1982).
http://dx.doi.org/10.1088/0022-3719/15/36/018
20.
20.A. A. Taskin and Y. Ando, Phys. Rev. B 80, 085303 (2009).
http://dx.doi.org/10.1103/PhysRevB.80.085303
21.
21.M. Bianchi, D. Guan, S. Bao, J. Mi, B. B. Iversen, P. D. King, and P. Hofmann, Nat. commun. 1, 128 (2010).
http://dx.doi.org/10.1038/ncomms1131
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/content/aip/journal/adva/6/5/10.1063/1.4943156
2016-02-29
2016-12-11

Abstract

We deposited high quality (SbBi)Te on mica substrate by molecular beam epitaxy and investigated their magnetotransport properties. It is found that the average surface roughness of thin films is lower than 2 nm. Moreover, a local maxima on the sheet resistance is obtained with x = 0.043, indicating a minimization of bulk conductivity at this composition. For (SbBi)Te, weak antilocalization with coefficient of -0.43 is observed, confirming the existence of 2D surface states. Moreover Shubnikov-de Hass oscillation behavior occurs under high magnetic field. The 2D carrier density is then determined as 0.81 × 1016 m−2, which is lower than that of most TIs reported previously, indicating that (SbBi)Te is close to ideal TI composition of which the Dirac point and Fermi surface cross within the bulk bandgap. Our results thus demonstrate the best estimated composition for ideal TI is close to (SbBi)Te and will be helpful for designing TI-based devices.

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