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(001) textured FeNthin film with Ag under layer is successfully grown on GaAs substrate using a facing target sputtering (FTS) system. After post annealing, chemically ordered FeN phase is formed and detected by X-ray diffraction(XRD). High saturation magnetization (Ms) is measured by a vibrating sample magnetometer (VSM). In comparison with FeN with Ag under layer on MgO substrate and FeN with Fe under layer on GaAs substrate, the current layer structure shows a higher Ms value, with a magnetically softer feature in contrast to the above cases. In addition, X-ray photoelectron spectroscopy(XPS) is performed to characterize the binding energy of N atoms. To verify the role of strain that the FeN layer experiences in the above three structures,Grazing Incidence X-ray Diffraction (GIXRD) is conducted to reveal a large in-plane lattice constant due to the in-plane biaxial tensile strain.


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