No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Magnetic properties of the layered III-VI diluted magnetic semiconductor Ga1−x
, J. Guo
, L.M. Zhang
, D.J. Li
, G.L. Yang
, F. Chen
, K. Jiang
, M.E. Evdokimov
, M.M. Nazarov
, U.M. Andreev
, G.V. Lanskii
, K.A. Kokh
, A.E. Kokh
, and V.A. Svetlichnyi
, “Optical properties of non-linear crystal grown from the melt GaSe-AgGaSe2
,” Optics Comm. 287
2.G. Xu, G. Sun, Y.J. Ding, I.B. Zotova, K.C. Mmandal, A. Mertiri, G. Pabst, and N. Fernelius, “Investigation of symmetries of second-order nonlear susceptibility tensor of GaSe crystals in THz domainn,” Optics Comm. 284, 2027-2030 (2011).
3.Z. Rak, S.D. Mahanti, K.C. Mandal, and N.C. Fernelius, “Doping dependence of electronic and mechanical properties of GaSe1−xTex, and Ga1−xInxSe from first pricniples,” Phys. Rev. B 82, 155203 (2010).
4.W. Shi, Y.J. Ding, N. Fernelius, and K. Vodopyanov, “Efficient, tunable, and coherent 0.18-5.27-THz source based on GaSe crystal,” Optics Lett. 27, 1454-1456 (2002).
5.K.C. Mandal, S.H. Kang, M. Choi, J. Chen, X.C. Zhang, J.M. Schleicher, A. Achmuttenmaer, and N.C. Fernelius, “III-VI Chalcogenide Semiconductor Crystals for Broadband Tunable THz Sources and Sensors,” IEEE J. of Selected Topics in Quantum Electronics 14, 284 (2008).
6.G. Xu, G. Sun, Y.J. Ding, I.B. Zotova, K.C. Mandal, A. Mertiri, G. Pabst, R. Roy, and N.C. Fernelius, “Symmetries of Second-Order Nonlinear Susceptibility Tensor for GaSe by Investigating THz Generation,” IEEE 173 (2010).
8.V.G. Voevodin, O.V. Voevodina, S.A. Bereznaya, Z.V. Korotchenko, A.N. Morozov, S.Y. Sarkisov, N.C. Fernelius, and J.T. Goldstein, “Large single crystals of gallium selenide: growing, doping by In and characterization,” Optics Materials 26, 495-499 (2004).
9.Z.S. Feng, Z.H. Kang, F.G. Wu, J.Y. Gao, Y. Jiang, H.Z. Zhang, Y.M. Andreev, G.V. Lanskii, V.V. Atuchin, and T.A. Gavrilova, Opt. Express 16, 9978 (2008).
11.N.B. Singh, D.R. Suhre, W. Rosch, R. Meyer, M. Marable, N.C. Fernelius, F.K. Hopkins, D.E. Zelmon, and R. Narayanan, J. Cryst. Growth 198-199, 588 (1999).
12.See, for example, in Semiconductors and Semimetals, edited by J. K. Furdyna and J. Kossut (Academic, Boston, 1988), Vol. 25.
26. Landolt-Bornstein, Group III: Crystal and solid state physics, Semiconductors (Springer-Verlag, 1983), Vol. 9, p. 289.
Article metrics loading...
Magnetic properties of single crystalline Ga1−xFexTe (x = 0.05) have been measured. GaTe and related layered III-VI semiconductors exhibit a rich collection of important properties for THz generation and detection. The magnetization versus field for an x = 0.05 sample deviates from the linear response seen previously in Ga1−xMnxSe and Ga1−xMnxS and reaches a maximum of 0.68 emu/g at 2 K in 7 T. The magnetization of Ga1−xFexTe saturates rapidly even at room temperature where the magnetization reaches 50% of saturation in a field of only 0.2 T. In 0.1 T at temperatures between 50 and 400 K, the magnetization drops to a roughly constant 0.22 emu/g. In 0 T, the magnetization drops to zero with no hysteresis present. The data is consistent with Van-Vleck paramagnetism combined with a pronounced crystalline anisotropy, which is similar to that observed for Ga1−xFexSe. Neither the broad thermal hysteresis observed from 100-300 K in In1−xMnxSe nor the spin-glass behavior observed around 10.9 K in Ga1−xMnxS are observed in Ga1−xFexTe. Single crystal x-ray diffraction data yield a rhombohedral space group bearing hexagonal axes, namely R3c. The unit cell dimensions were a = 5.01 Å, b = 5.01 Å, and c = 17.02 Å, with α = 90°, β = 90°, and γ = 120° giving a unit cell volume of 369 Å3.
Full text loading...
Most read this month