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The CuSithin films have been successfully fabricated by pulsed laser deposition(PLD). The influences of laser energy fluency () and deposition temperature () on the phase structure were investigated. The results show that Cudeposited on Si (001) at = 0.5-2.0 J/cm2, and η”-CuSi formed on Si (111) at = 1.0-2.0 J/cm2. The films were consisted of Cu, η’-CuSi, ε-CuSi and -CuSi at = 100-500 °C on Si (001). The films were the single phase of η-CuSi at = 700 °C. In the case of Si (111), the phase structures transformed from Cu to Cu + η’-CuSi to η’-CuSi to η’-CuSi + η-CuSi with the increasing of . Rectangular grains were formed on Si (001), whereas triangular grains on Si (111). Cu (001) film was epitaxially grown on Si (001) at = 1.5 J/cm2 and = 20 °C. η-CuSi (001) epitaxial layer was formed on Si (111) at = 1.5 J/cm2 and = 700 °C. The epitaxial relationships of Cu (001)[100]//Si (001)[110] and η-CuSi (001)[-110]//Si (111)[11-2] were identified.


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