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Richardson-Schottky transport mechanism in ZnS nanoparticles
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We report the synthesis and electrical transport mechanism in ZnSsemiconductornanoparticles. Temperature dependent direct current transport measurements on the compacts of ZnS have been performed to investigate the transport mechanism for temperature ranging from 300 K to 400 K. High frequency dielectric constant has been used to obtain the theoretical values of Richardson-Schottky and Poole-Frenkel barrier lowering coefficients. Experimental value of the barrier lowering coefficient has been calculated from conductance-voltagecharacteristics. The experimental value of barrier lowering coefficient βexp lies close to the theoretical value of Richardson-Schottky barrier lowering coefficient βth,RS showing Richardson-Schottky emission has been responsible for conduction in ZnSnanoparticles for the temperature range studied.
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