No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Effect of layer thickness on device response of silicon heavily supersaturated with sulfur
4.B.P. Bob, A. Kohno, S. Charnvanichborikarn, J.M. Warrender, I. Umezu, M. Tabbal, J.S. Williams, and M.J. Aziz, Journal of Applied Physics 107, 123506 (2010).
5.I. Umezu, J.M. Warrender, S. Charnvanichborikarn, A. Kohno, J.S. Williams, M. Tabbal, D.G. Papazoglou, X.-C. Zhang, and M.J. Aziz, Journal of Applied Physics 113, 213501 (2013).
6.I. Umezu, A. Kohno, J.M. Warrender, Y. Takatori, Y. Hirao, S. Nakagawa, A. Sugimura, S. Charnvanichborikarn, J.S. Williams, and M.J. Aziz, American Institute of Physics Conference Proceedings 1399, 51 (2011).
7.A.J. Said, D. Recht, J.T. Sullivan, J.M. Warrender, T. Buonassisi, P.D. Persans, and M.J. Aziz, Applied Physics Letters 99, 073503 (2011).
8.M. Tabbal, T.G. Kim, J.M. Warrender, M.J. Aziz, B.L. Cardozo, and R.S. Goldman, Journal of Vacuum Science and Technology B 25, 1947 (2007).
9.D. Recht, D. Hutchinson, T. Cruson, A. DiFranzo, A. McAllister, A.J. Said, J.M. Warrender, P.D. Persans, and M.J. Aziz, Applied Physics Express 5, 041301 (2012).
10.P.D. Persans, N.E. Berry, D. Recht, D. Hutchinson, H. Peterson, J. Clark, S. Charnvanichborikarn, J.S. Williams, A. DiFranzo, M.J. Aziz, and J.M. Warrender, Applied Physics Letters 101, 111105 (2012).
11.P.D. Persans, N.E. Berry, D. Recht, D. Hutchinson, A.J. Said, J.M. Warrender, H. Peterson, A. DiFranzo, C. McGahan, J. Clark, W. Cunningham, and M.J. Aziz, Materials Research Society Symposium Proceedings 1321 (2011).
12. Persans et al., manuscript preparation in progress.
13. The comparison plot shown in Fig.3 of Ref. 1 shows that, in the wavelength range from 400-700nm, the data taken by Pan et al. for an average concentration of 1.5 × 1020 at/cm2 is indistinguishable from the data in Ref. 4, which was emulated in this study. The samples in the former were fabricated on silicon-on-insulator substrates and in latter, on bulk silicon.
17.D. Hutchinson, Ph.D. thesis, Rensselaer Polytechnic Institute, Troy, NY (2014).
18.J.T. Sullivan, C.B. Simmons, J.J. Krich, A.J. Akey, D. Recht, M.J. Aziz, and T. Buonassisi, Journal of Applied Physics 114, 103701 (2013).
Article metrics loading...
We report on a simple experiment in which the thickness of a hyperdoped silicon layer, supersaturated with sulfur by ion implantation followed by pulsed laser melting and rapid solidification, is systematically varied at constant average sulfur concentration, by varying the implantation energy, dose, and laser fluence. Contacts are deposited and the external quantum efficiency (EQE) is measured for visible wavelengths. We posit that the sulfur layer primarily absorbs light but contributes negligible photocurrent, and we seek to support this by analyzing the EQE data for the different layer thicknesses in two interlocking ways. In the first, we use the measured concentration depth profiles to obtain the approximate layer thicknesses, and, for each wavelength, fit the EQE vs. layer thickness curve to obtain the absorption coefficient of hyperdoped silicon for that wavelength. Comparison to literature values for the hyperdoped siliconabsorption coefficients [S.H. Pan et al. Applied Physics Letters 98, 121913 (2011)] shows good agreement. Next, we essentially run this process in reverse; we fit with Beer’s law the curves of EQE vs. hyperdoped siliconabsorption coefficient for those wavelengths that are primarily absorbed in the hyperdoped silicon layer, and find that the layer thicknesses obtained from the fit are in good agreement with the original values obtained from the depth profiles. We conclude that the data support our interpretation of the hyperdoped silicon layer as providing negligible photocurrent at high S concentrations. This work validates the absorption data of Pan et al. [Applied Physics Letters 98, 121913 (2011)], and is consistent with reports of short mobility-lifetime products in hyperdoped layers. It suggests that for optoelectronic devices containing hyperdoped layers, the most important contribution to the above band gap photoresponse may be due to photons absorbed below the hyperdoped layer.
Full text loading...
Most read this month