Skip to main content
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
/content/aip/journal/adva/6/5/10.1063/1.4949521
1.
1.Y. Zhang, Y. W. Tan, H. L. Stormer, and P. Kim, Nature 438, 201 (2005).
http://dx.doi.org/10.1038/nature04235
2.
2.A. a. Balandin, S. Ghosh, W. Bao, I. Calizo, D. Teweldebrhan, F. Miao, and C. N. Lau, Nano Lett. 8, 902 (2008).
http://dx.doi.org/10.1021/nl0731872
3.
3.C. Lee, X. Wei, J. W. Kysar, and J. Hone, Science 321, 385 (2008).
http://dx.doi.org/10.1126/science.1157996
4.
4.M. Hirano and K. Shinjo, Phys. Rev. B 41, 11837 (1990).
http://dx.doi.org/10.1103/PhysRevB.41.11837
5.
5.M. Dienwiebel, G. S. Verhoeven, N. Pradeep, J. W. M. Frenken, J. a. Heimberg, and H. W. Zandbergen, Phys. Rev. Lett. 92, 126101 (2004).
http://dx.doi.org/10.1103/PhysRevLett.92.126101
6.
6.Z. Liu, J. Yang, F. Grey, J. Z. Liu, Y. Liu, Y. Wang, Y. Yang, Y. Cheng, and Q. Zheng, Phys. Rev. Lett. 108, 205503 (2012).
http://dx.doi.org/10.1103/PhysRevLett.108.205503
7.
7.C. Lee, Q. Li, W. Kalb, X. Z. Liu, H. Berger, R. W. Carpick, and J. Hone, Science 328, 76 (2010).
http://dx.doi.org/10.1126/science.1184167
8.
8.J. S. Choi, J.-S. Kim, I.-S. Byun, D. H. Lee, M. J. Lee, B. H. Park, C. Lee, D. Yoon, H. Cheong, K. H. Lee, Y.-W. Son, J. Y. Park, and M. Salmeron, Science 333, 607 (2011).
http://dx.doi.org/10.1126/science.1207110
9.
9.K. S. Novoselov, A. K. Geim, S. V Morozov, D. Jiang, Y. Zhang, S. V Dubonos, I. V Grigorieva, and A. A. Firsov, Science 306, 666 (2004).
http://dx.doi.org/10.1126/science.1102896
10.
10.A. K. Geim and K. S. Novoselov, Nat. Mater. 6, 183 (2007).
http://dx.doi.org/10.1038/nmat1849
11.
11.A. K. Geim, Science 324, 1530 (2009).
http://dx.doi.org/10.1126/science.1158877
12.
12.Q. Li, C. Lee, R. W. Carpick, and J. Hone, Phys. Status Solidi Basic Res. 247, 2909 (2010).
http://dx.doi.org/10.1002/pssb.201000555
13.
13.Y. Dong, J. Phys. D. Appl. Phys. 47, 055305 (2014).
http://dx.doi.org/10.1088/0022-3727/47/5/055305
14.
14.D.-H. Cho, L. Wang, J.-S. Kim, G.-H. Lee, E. S. Kim, S. Y. S. Lee, S. Y. S. Lee, J. Hone, and C. Lee, Nanoscale 5, 3063 (2013).
http://dx.doi.org/10.1039/c3nr34181j
15.
15.Z. Deng, A. Smolyanitsky, Q. Li, X.-Q. Feng, and R. J. Cannara, Nat. Mater. 11, 1032 (2012).
16.
16.T. Filleter, J. L. McChesney, A. Bostwick, E. Rotenberg, K. V. Emtsev, T. Seyller, K. Horn, and R. Bennewitz, Phys. Rev. Lett. 102, 1 (2009).
http://dx.doi.org/10.1103/PhysRevLett.102.086102
17.
17.T. Filleter and R. Bennewitz, Phys. Rev. B 81, 155412 (2010).
http://dx.doi.org/10.1103/PhysRevB.81.155412
18.
18.M. Reguzzoni, A. Fasolino, E. Molinari, and M. C. Righi, J. Phys. Chem. C 116, 21104 (2012).
http://dx.doi.org/10.1021/jp306929g
19.
19.L. Xu, T.-B. Ma, Y.-Z. Hu, and H. Wang, Nanotechnology 22, 285708 (2011).
http://dx.doi.org/10.1088/0957-4484/22/28/285708
20.
20.S. Kwon, J.-H. Ko, K.-J. Jeon, Y.-H. Kim, and J. Y. Park, Nano Lett. 12, 6043 (2012).
http://dx.doi.org/10.1021/nl204019k
21.
21.J.-H. Ko, S. Kwon, I.-S. Byun, J. S. Choi, B. H. Park, Y.-H. Kim, and J. Y. Park, Tribol. Lett. 50, 137 (2013).
http://dx.doi.org/10.1007/s11249-012-0099-1
22.
22.A. L. Kitt, Z. Qi, S. Rémi, H. S. Park, A. K. Swan, and B. B. Goldberg, Nano Lett. 13, 2605 (2013).
http://dx.doi.org/10.1021/nl4007112
23.
23.Z. Deng, N. N. Klimov, S. D. Solares, T. Li, H. Xu, and R. J. Cannara, Langmuir 29, 235 (2013).
http://dx.doi.org/10.1021/la304079a
24.
24.P. Liu and Y. W. Zhang, Carbon 49, 3687 (2011).
http://dx.doi.org/10.1016/j.carbon.2011.05.004
25.
25.A. Smolyanitsky, J. P. Killgore, and V. K. Tewary, Phys. Rev. B 85, 035412 (2012).
http://dx.doi.org/10.1103/PhysRevB.85.035412
26.
26.A. Smolyanitsky and J. Killgore, Phys. Rev. B 86, 125432 (2012).
http://dx.doi.org/10.1103/PhysRevB.86.125432
27.
27.T. Schneider, E. P. Stoll, and R. Morf, Phys. Rev. B 18, 1417 (1978).
http://dx.doi.org/10.1103/PhysRevB.18.1417
28.
28.S. Stuart, A. Tutein, and J. Harrison, J. Chem. Phys. 112, 6472 (2000).
http://dx.doi.org/10.1063/1.481208
29.
29.Y. J. Shin, R. Stromberg, R. Nay, H. Huang, A. T. S. Wee, H. Yang, and C. S. Bhatia, Carbon 49, 4070 (2011).
http://dx.doi.org/10.1016/j.carbon.2011.05.046
30.
30.Y. Mo, K. T. Turner, and I. Szlufarska, Nature 457, 1116 (2009).
http://dx.doi.org/10.1038/nature07748
31.
31.M. Dienwiebel, N. Pradeep, G. S. Verhoeven, H. W. Zandbergen, and J. W. M. Frenken, Surf. Sci. 576, 197 (2005).
http://dx.doi.org/10.1016/j.susc.2004.12.011
32.
32.Y. Dong, X. Wu, and A. Martini, Nanotechnology 24, 375701 (2013).
http://dx.doi.org/10.1088/0957-4484/24/37/375701
http://aip.metastore.ingenta.com/content/aip/journal/adva/6/5/10.1063/1.4949521
Loading
/content/aip/journal/adva/6/5/10.1063/1.4949521
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/adva/6/5/10.1063/1.4949521
2016-05-09
2016-09-26

Abstract

We performed molecular dynamics (MD) simulations of a diamond probe scanned on a suspended graphene to reveal the effect of strain on the frictional properties of suspended graphene. The graphene was subjected to some certain strain along the scanning direction. We compared the friction coefficient obtained from different normal loads and strain. The results show that the friction coefficient can be decreased about one order of magnitude with the increase of the strain. And that can be a result of the decreased asymmetry of the contact region which is caused by strain. The synthetic effect of potential energy and the fluctuation of contact region were found to be the main reason accounting for the fluctuation of the friction force. The strain can reduce the fluctuation of the contact region and improve the stability of friction.

Loading

Full text loading...

/deliver/fulltext/aip/journal/adva/6/5/1.4949521.html;jsessionid=ApxISAwVH4ImwBf6VlTFei6Z.x-aip-live-03?itemId=/content/aip/journal/adva/6/5/10.1063/1.4949521&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/adva
true
true

Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
/content/realmedia?fmt=ahah&adPositionList=
&advertTargetUrl=//oascentral.aip.org/RealMedia/ads/&sitePageValue=aipadvances.aip.org/6/5/10.1063/1.4949521&pageURL=http://scitation.aip.org/content/aip/journal/adva/6/5/10.1063/1.4949521'
Right1,Right2,Right3,