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Voltagesensors based on the Pockels electro-opticeffect in LiNbO crystals have been applied to practical engineering measurements because of their passive nature, wide operating bands, and low transmission loss. However, the temperature of the measurement environment can greatly affect the dynamic responses of these sensors because the natural birefringence of a single LiNbO crystal voltagesensor(SVS) is related to its temperature. To improve the stability of this sensor over a wide temperature range, a double crystal compensation method is introduced in this paper to compensate for the natural birefringence of the SVS. A double LiNbO crystal voltagesensor (DVS) was fabricated, and its working point drift characteristics and amplitude-frequency response were investigated over the temperature range from 0°C to 50°C. The effects of two intrinsic parameters of the LiNbO crystal were also investigated. Comparison between an existing SVS and the proposed DVS showed that the DVS resisted environmental temperature fluctuations more strongly.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd