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/content/aip/journal/adva/6/5/10.1063/1.4949754
2016-05-10
2016-12-08

Abstract

The passivation of (100) GaSbsurface was investigated by means of the long-chain octadecanethiol (ODT) self-assembledmonolayer(SAM). The properties of ODT SAM on (100) GaSb were characterized by the atomic force microscopy using Kelvin probe force microscopy mode and X-ray photoelectron spectroscopy. The chemical treatment of 10mM ODT-CHOH has been applied to the passivation of a type-II superlattice InAs/GaSb photodetector. The electrical measurements indicate that the current density was reduced by one order of magnitude as compared to an unpassivated photodetector.

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