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We investigated the reset breakdown phenomenon of HfO-based resistive memory for reliable switching operation in a fully CMOS compatible stack. Through the understanding on the effect of electrodematerials and device area, our findings show that observed failure is attributed to additional oxygen vacancies close to the electrode interface, where switching is occurred. Therefore, RuO serving as an oxygen diffusion barrier was introduced to suppress the generation of unwanted oxygen vacancies by preventing out-diffusion of oxygen through the electrode. As a result, significantly enhanced breakdown strength in HfO/RuO stack is achieved and resulting in improved cycle endurance with larger on/off ratio.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd