Skip to main content

News about Scitation

In December 2016 Scitation will launch with a new design, enhanced navigation and a much improved user experience.

To ensure a smooth transition, from today, we are temporarily stopping new account registration and single article purchases. If you already have an account you can continue to use the site as normal.

For help or more information please visit our FAQs.

banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
/content/aip/journal/adva/6/5/10.1063/1.4950966
1.
1.L. Goux, A. Fantini, G. Kar, Y.-Y. Chen, N. Jossart, R. Degraeve, S. Clima, B. Govoreanu, G. Lorenzo, G. Poutois, D. J. Wouters, J. A. Kittl, L. Altimime, and M. Jurczak, VLSI Symp. Tech. Dig. 159160 (2012).
2.
2.B. Govoreanu, G.S. Kar, Y-Y. Chen, V. Paraschiv, S. Kubicek, A. Fantini, I.P. Radu, L. Goux, S. Clima, R. Degraeve, N. Jossart, O. Richard, T. Vandeweyer, K. Seo, P. Hendrickx, G. Pourtois, H. Bender, L. Altimime, D.J. Wouters, J.A. Kittl, and M. Jurczak, IEDM Tech. Dig. 729732 (2011).
3.
3.J. Joshua Yang, Matthew D. Pickett, Xuema Li, Douglas A. A. Ohlberg, Duncan R. Stewart, and R. Stanley Williams, Nat. Nanotechnol. 3, 429 (2009).
http://dx.doi.org/10.1038/nnano.2008.160
4.
4.Jubong Park, Seungjae Jung, Joonmyoung Lee, Wootae Lee, Seonghyun Kim, Jungho Shin, and Hyunsang Hwang, Microelectron. Eng. 88, 1136 (2011).
http://dx.doi.org/10.1016/j.mee.2011.03.050
5.
5.Myoung-Jae Lee, Chang Bum Lee, Dongsoo Lee, Seung Ryul Lee, Man Chang, Ji Hyun Hur, Young-Bae Kim, Chang-Jung Kim, David H. Seo, Sunae Seo, U-In Chung, In-Kyeong Yoo, and Kinam Kim, Nat. Mater. 10, 625 (2011).
http://dx.doi.org/10.1038/nmat3070
6.
6.Y. Hayakawa, A. Himeno, R. Yasuhara, W. Boullart, E. Vecchio, T. Vandeweyer, T. Witters, D. Crotti, M. Jurczak, S. Fujii, S. Ito, Y. Kawashima, Y. Ikeda, A. Kawahara, K. Kawai, Z. Wei, S. Muraoka, K. Shimakawa, T. Mikawa, and S. Yoneda, VLSI Symp. Tech. Dig. 1415 (2015).
7.
7.Soo Gil Kim, Tae Jung Ha, Seonghyun Kim, Jae Yeon Lee, Kyung Wan Kim, Jung Ho Shin, Yong Taek Park, suk Pyo Song, Beom Yong Kim, Wan Gee Kim, Jong Chul Lee, Hyun Sun Lee, Jong Ho Song, Eung Rim Hwang, Sang Hoon Cho, Ja Chun Ku, Jong Il Kim, Kyu Sung Kim, Jong Hee Yoo, Hyo Jin Kim, Hoe Gwon Jung, Kee Jeung Lee, Suock Chung, Jong Ho Kang, Jung Hoon Lee, Hyeong Soo Kim, Sung Joo Hong, Gary Gibson, and Yoocharn Jeon, IEDM Tech. Dig. 249252 (2015).
8.
8.Y. S. Chen, H. Y. Lee, P. S. Chen, C. H. Tsai, P. Y. Gu, T. Y. Wu, K. H. Tsai, S. S. Sheu, W. P. Lin, C. H. Lin, P. F. Chiu, W. S. Chen, F. T. Chen, C. Lien, and M.-J. Tsai1, IEDM Tech. Dig. 717719 (2010).
9.
9.Joonmyoung Lee, Jungho Shin, Daeseok Lee, Wootae Lee, Seungjae Jung, Minseok Jo, Jubong Park, Kuyyadi P. Biju, Seonghyun Kim, Sangsu Park, and Hyunsang Hwang, IEDM Tech. Dig. 452455 (2010).
10.
10.Takeki Ninomiya, Shunsaku Muraoka, Zhiqiang Wei, Ryutaro Yasuhara, Koji Katayama, and Takeshi Takagi, IEEE Electron Device Lett. 35, 214 (2013).
11.
11.Daeseok Lee, Jeonghwan Song, Jiyong Woo, Jaesung Park, Sangsu Park, Euijun Cha, Sangheon Lee, Yunmo Koo, Kibong Moon, and Hyunsang Hwang, IEEE Electron Device Lett. 34, 762 (2014).
12.
12.C.Y. Chen, L. Goux, A. Fantini, S. Clima, R. Degraeve, A. Redolfi, Y.Y. Chen, G. Groeseneken, and M. Jurczak, Appl. Phys. Lett. 106, 053501 (2015).
http://dx.doi.org/10.1063/1.4907573
13.
13.S. Balatti, S. Ambrogio, Z. Wang, S. Sills, A. Calderoni, N. Ramaswamy, and D. Ielmini, IEEE Trans. Electron Devices 62, 3365 (2015).
http://dx.doi.org/10.1109/TED.2015.2463104
14.
14.Z. Wei, Y. Kanzawa, K. Arita, Y. Katoh, K. Kawai, S. Muraoka, S. Mitani, S. Fujii, K. Katayama, M. Iijima, T. Mikawa, T. Ninomiya, R. Miyanaga, Y. Kawashima, K. Tsuji, A. Himeno, T. Okada, R. Azuma, K. Shimakawa, H. Sugaya, T. Takagi, R. Yasuhara, K. Horiba, H. Kumigashira, and M. Oshima, IEDM Tech. Dig. 14 (2008).
15.
15.L. Goux, A. Fantini, Y. Y. Chen, A. Redolfi, R. Degraeve, and M. Jurczak, ECS Solid State Let. 11, 79 (2014).
http://dx.doi.org/10.1149/2.0011412ssl
16.
16.Yuichi MATSUI, Masahiko HIRATANI, and Shinichiro KIMURA, Japan J. Appl. Phys. 39, 256 Number 1 (2000).
http://dx.doi.org/10.1143/JJAP.39.256
17.
17.Joonmyoung Lee, El Mostafa Bourim, Wootae Lee, Jubong Park, Minseok Jo, Seungjae Jung, Jungho Shin, and Hyunsang Hwang, Appl. Phys. Lett. 97, 172105 (2010).
http://dx.doi.org/10.1063/1.3491803
18.
18.A. Gruverman, O. Auciello, and H. Tokumoto, Appl. Phys. Lett. 69, 3191 (1996).
http://dx.doi.org/10.1063/1.117957
19.
19.Y. C. Choi and B. S. Lee, Japan J. Appl. Phys. 38, 4876 Number 8 (1999).
http://dx.doi.org/10.1143/JJAP.38.4876
http://aip.metastore.ingenta.com/content/aip/journal/adva/6/5/10.1063/1.4950966
Loading
/content/aip/journal/adva/6/5/10.1063/1.4950966
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/adva/6/5/10.1063/1.4950966
2016-05-16
2016-12-09

Abstract

We investigated the reset breakdown phenomenon of HfO-based resistive memory for reliable switching operation in a fully CMOS compatible stack. Through the understanding on the effect of electrodematerials and device area, our findings show that observed failure is attributed to additional oxygen vacancies close to the electrode interface, where switching is occurred. Therefore, RuO serving as an oxygen diffusion barrier was introduced to suppress the generation of unwanted oxygen vacancies by preventing out-diffusion of oxygen through the electrode. As a result, significantly enhanced breakdown strength in HfO/RuO stack is achieved and resulting in improved cycle endurance with larger on/off ratio.

Loading

Full text loading...

/deliver/fulltext/aip/journal/adva/6/5/1.4950966.html;jsessionid=9Wx7NFUqdDLC-Ei9cmLKJE7L.x-aip-live-02?itemId=/content/aip/journal/adva/6/5/10.1063/1.4950966&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/adva
true
true

Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
/content/realmedia?fmt=ahah&adPositionList=
&advertTargetUrl=//oascentral.aip.org/RealMedia/ads/&sitePageValue=aipadvances.aip.org/6/5/10.1063/1.4950966&pageURL=http://scitation.aip.org/content/aip/journal/adva/6/5/10.1063/1.4950966'
Right1,Right2,Right3,