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Bandgap engineering of GaN nanowires
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Bandgap engineering has been a powerful technique for manipulating the electronic and optical properties of semiconductors. In this work, a systematic investigation of the electronic properties of  GaN
nanowires was carried out using the density functional based tight-binding method (DFTB). We studied the effects of geometric structure and uniaxial strain on the electronic properties of GaN
nanowires with diameters ranging from 0.8 to 10 nm. Our results show that the band gap of GaN
nanowires depends linearly on both the surface to volume ratio (S/V) and tensile strain. The band gap of GaN
nanowires increases linearly with S/V, while it decreases linearly with increasing tensile strain. These linear relationships provide an effect way in designing GaN
nanowires for their applications in novel nano-devices.
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