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Electronic resonant tunneling on graphene superlattice heterostructures with a tunable graphene layer
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We have theoretically investigated the electronic resonant tunneling effect in graphene
heterostructures, where a tunable graphene layer is inserted between two different superlattices. It is found that a complete tunneling state appears inside the enlarged forbidden gap of the heterostructure by changing the thickness of the inserted graphene layer and the transmittance of the tunneling state depends on the thickness of the inserted layer. Furthermore, the frequency of the tunneling state changes with the thickness of the inserted graphene layer but it always located in the little overlapped forbidden gap of two graphene
superlattices. Therefore, both a perfect tunneling state and an ultrawide forbidden gap are realized in such heterostrutures. Since maximum probability densities of the perfect tunneling state are highly localized near the interface between the inserted graphene layer and one graphene
superlattice, it can be named as an interface-like state. Such structures are important to fabricate high-Q narrowband electron wave filters.
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