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Switching characteristics for ferroelectric random access memory based on RC model in poly(vinylidene fluoride-trifluoroethylene) ultrathin films
B. Kam, T. H. Ke, A. Chasin, M. Tyagi, C. Cristoferi, K. Tempelaars, A. J. J. M. van Breemen, K. Myny, S. Schols, and J. Genoe, IEEE Electr. Device L. 35, 539 (2014).
J. L. Wang, B. L. Liu, X. L. Zhao, B. B. Tian, Y. H. Zou, S. Sun, H. Shen, J. L. Sun, X.J. Meng, and J. H. Chu, Appl. Phys. Lett. 104, 182907 (2014).
D. Zhao, I. Katsouras, M. Li, K. Asadi, J. Tsurumi, G. Glasser, J. Takeya, P.W. Blom, and D.M. de Leeuw, Sci Rep-UK. 4, 5075 (2014).
W. J. Hu, D.-M. Juo, L. You, J. Wang, Y.-C. Chen, Y.-H. Chu, and T. Wu, Sci Rep-UK. 4, 4772 (2014).
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The switching characteristic of the poly(vinylidene fluoride-trifluoroethlene) (P(VDF-TrFE)) films have been studied at different ranges of applied electric field. It is suggest that the increase of the switching speed upon nucleation protocol and the deceleration of switching could be related to the presence of a non-ferroelectric layer. Remarkably, a capacitor and resistor (RC) links model plays significant roles in the polarization switching dynamics of the thin films. For P(VDF-TrFE) ultrathin films with electroactive interlayer, it is found that the switching dynamic characteristics are strongly affected by the contributions of resistor and non-ferroelectric (non-FE) interface factors. A corresponding experiment is designed using poly(3,4-ethylene dioxythiophene):poly(styrene sulfonic) (PEDOT-PSSH) as interlayer with different proton concentrations, and the testing results show that the robust switching is determined by the proton concentration in interlayer and lower leakage current in circuit to reliable applications of such polymer films. These findings provide a new feasible method to enhance the polarization switching for the ferroelectric random access memory.
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