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/content/aip/journal/adva/6/6/10.1063/1.4953809
2016-06-07
2016-12-03

Abstract

We investigated the dependence of electron mobility on the thickness of MoS nanosheets by fabricating bottom-gate single and few-layer MoS thin-film transistors with SiO gate dielectrics and Au electrodes. All the fabricated MoS transistors showed on/off-current ratio of ∼107 and saturated output characteristics without high-k capping layers. As the MoS thickness increased from 1 to 6 layers, the field-effect mobility of the fabricated MoS transistors increased from ∼10 to ∼18 cm2V−1s−1. The increased subthreshold swing of the fabricated transistors with MoS thickness suggests that the increase of MoS mobility with thickness may be related to the dependence of the contact resistance and the dielectric constant of MoS layer on its thickness.

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