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Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions
Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F. Wang, F. Bonaccorso, D. M. Basko, and A. C. Ferrari, ACS Nano 4, 803 (2010).
S. Chandramohan, K. B. Ko, J. H. Yang, B. D. Ryu, Y. Katharria, T. Y. Kim, B. J. Cho, and C.-H. Hong, J. Appl. Phys. 115, 054503 (2014).
O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsenbeck, J. Appl. Phys. 85, 3222 (1999).
U. K. Mishra, P. Parikh, and Y.-F. WU, IEEE Trans. Electron Devices 90, 1022 (2002).
S. C. Binari, K. Ikossi, J. A. Roussos, W. Kruppa, D. Park, H. B. Dietrich, D. D. Koleske, A. E. Wickenden, and R. L. Henry, IEEE Trans. Electron Devices 48, 465 (2001).
E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts, 2nd ed. (Oxford Science, Oxford, 1988), p. 15.
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transport mechanism of graphene formed on AlxGa1−xN/GaN heterostructures with various Al mole fractions (x = 0.15, 0.20, 0.30, and 0.40) is investigated. The current–voltage measurement from graphene to AlGaN/GaN shows an excellent rectifying property. The extracted Schottky barrier height of the graphene/AlGaN/GaN contacts increases with the Al mole fraction in AlGaN. However, the current
transport mechanism deviates from the Schottky-Mott theory owing to the deterioration of AlGaN crystal quality at high Al mole fractions confirmed by reverse leakage current measurement.
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