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Unconventional magnetization of Fe3
thin film grown on amorphous SiO2
D. J. Huang, H.-J. Lin, J. Okamoto, K. S. Chao, H.-T. Jeng, G. Y. Guo, C.-H. Hsu, C.-M. Huang, D. C. Ling, W. B. Wu, C. S. Yang, and C. T. Chen, Phys. Rev. Lett. 96, 096401 (2006).
J. Schlappa, C. Schüßler-Langeheine, C. F. Chang, H. Ott, A. Tanaka, Z. Hu, M. W. Haverkort, E. Schierle, E. Weschke, G. Kaindl, and L. H. Tjeng, Phys. Rev. Lett. 100, 026406 (2008).
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High quality single crystal Fe3O4
thin films with (111) orientation had been prepared on amorphous SiO2 substrate by pulsed laser deposition. The magnetization properties of the films are found to be unconventional. The Verwey transition
temperature derived from the magnetization jump is around 140K, which is higher than the bulk value and it can be slightly suppressed by out-plane magnetic field; the out-of-plane magnetization, which is unexpectedly higher than the in-plane value, is also significantly increased as compared with the bulk value. Our findings highlight the unusual magnetization of Fe3O4
grown on the amorphous SiO2 substrate.
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