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/content/aip/journal/adva/6/6/10.1063/1.4954666
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See supplementary material at http://dx.doi.org/10.1063/1.4954666 for TFT characteristics with and without ELA, and the details of film thickness and densities measured by XRR, and IZO film surface images with and without ELA.[Supplementary Material]
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/content/aip/journal/adva/6/6/10.1063/1.4954666
2016-06-17
2016-09-26

Abstract

In a previous work, we reported the high field effect mobility of ZnO-doped InO (IZO) thin film transistors (TFTs) irradiated by excimer laser annealing (ELA) [M. Fujii , Appl. Phys. Lett. , 122107 (2013)]. However, a deeper understanding of the effect of ELA on the IZO film characteristics based on crystallinity, carrier concentrations, and optical properties is needed to control localized carrier concentrations for fabricating self-aligned structures in the same oxide film and to adequately explain the physical characteristics. In the case of as-deposited IZO film used as the channel, a high carrier concentration due to a high density of oxygen vacancies was observed; such a film does not show the required TFT characteristics but can act as a conductive film. We achieved a decrease in the carrier concentration of IZO films by crystallization using ELA. This means that ELA can form localized conductive or semi-conductive areas on the IZO film. We confirmed that the reason for the carrier concentration decrease was the decrease of oxygen-deficient regions and film crystallization. The annealed IZO films showed nano-crystalline phase, and the temperature at the substrate was substantially less than the temperature limit for flexible films such as plastic, which is 50°C. This paves the way for the formation of self-aligned structures and separately formed conductive and semi-conductive regions in the same oxide film.

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