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Local Peltier-effect-induced reversible metal–insulator transition in VO2
M. M. Qazilbash, M. Brehm, B.-G. Chae, P.-C. Ho, G. O. Andreev, B.-J. Kim, S. J. Yun, A. V. Balatsky, M. B. Maple, F. Keilmann, H.-T. Kim, and D. N. Basov, Science 318, 1750 (2007).
T. Favaloro, J. Suh, B. Vermeersch, K. Liu, Y Gu, L.-Q. Chen, K. X. Wang, J. Wu, and A. Shakouri, Nano Lett 14, 2394 (2014).
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We report anomalous resistance leaps and drops in VO2
nanowires with operating current density and direction, showing reversible and nonvolatile switching. This event is associated with the metal–insulator phase transition (MIT) of local nanodomains with coexistence states of metallic and insulating phases induced by thermoelectric cooling and heating effects. Because the interface of metal and insulator domains has much different Peltier coefficient, it is possible that a significant Peltier effect would be a source of the local MIT. This operation can be realized by one-dimensional domain configuration in VO2
nanowires because one straight current path through the electronic domain-interface enables theoretical control of thermoelectric effects. This result will open a new method of reversible control of electronic states in correlated electron materials.
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