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We report the growth of high quality BiSe thin films on AlO substrates by using chemical vapor deposition. From the atomic force microscope, x-ray diffraction and transmission electron microscope measurements we found that the films are of good crystalline quality, have two distinct domains and can be grown epitaxially on the AlO substrate. Carrier concentration in the sample is found to be 1.1 × 1019 cm−3 between = 2 K to = 300 K, and electron mobility can reach 954 cm2/V s at = 2 K. Weak anti-localization effect is observed in the low temperature magneto-transport measurement for the sample which indicates that the thin film has topological surface state.


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