Skip to main content

News about Scitation

In December 2016 Scitation will launch with a new design, enhanced navigation and a much improved user experience.

To ensure a smooth transition, from today, we are temporarily stopping new account registration and single article purchases. If you already have an account you can continue to use the site as normal.

For help or more information please visit our FAQs.

banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
/content/aip/journal/adva/6/7/10.1063/1.4959223
1.
H. Fujiwara, Spectroscopic ellipsometry: principles and applications (John Wiley & Sons, 2007).
2.
D. Franta and I. Ohlídal, “Comparison of effective medium approximation and Rayleigh–Rice theory concerning ellipsometric characterization of rough surfaces,” Optics communications 248(4), 459-467 (2005).
http://dx.doi.org/10.1016/j.optcom.2004.12.016
3.
D. Aspnes, J. Theeten, and F. Hottier, “Investigation of effective-medium models of microscopic surface roughness by spectroscopic ellipsometry,” Physical Review B 20(8), 3292 (1979).
http://dx.doi.org/10.1103/PhysRevB.20.3292
4.
H. Fujiwara et al., “Assessment of effective-medium theories in the analysis of nucleation and microscopic surface roughness evolution for semiconductor thin films,” Physical Review B 61(16), 10832 (2000).
http://dx.doi.org/10.1103/PhysRevB.61.10832
5.
J. Li et al., “Spectroscopic ellipsometry studies of thin film CdTe and CdS: From dielectric functions to solar cell structures,” Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE (IEEE, 2009).
6.
F. Peiris et al., “Exploring the Optical Properties of Hg1- x Cd x Se Films Using IR-Spectroscopic Ellipsometry,” Journal of Electronic Materials 43(8), 3056-3059 (2014).
http://dx.doi.org/10.1007/s11664-014-3208-0
7.
J. Zanatta et al., “Molecular beam epitaxy growth of HgCdTe on Ge for third-generation infrared detectors,” Journal of electronic materials 35(6), 1231-1236 (2006).
http://dx.doi.org/10.1007/s11664-006-0246-2
8.
J. Arias et al., “Infrared diodes fabricated with HgCdTe grown by molecular beam epitaxy on GaAs substrates,” Applied Physics Letters 54(11), 1025-1027 (1989).
http://dx.doi.org/10.1063/1.100787
9.
T. De Lyon et al., “Heteroepitaxy of HgCdTe (112) infrared detector structures on Si (112) substrates by molecular-beam epitaxy,” Journal of Electronic Materials 25(8), 1341-1346 (1996).
http://dx.doi.org/10.1007/BF02655030
10.
L. He et al., “MBE HgCdTe on Si and GaAs substrates,” Journal of Crystal Growth 301, 268-272 (2007).
http://dx.doi.org/10.1016/j.jcrysgro.2006.11.188
11.
M. Daraselia et al., “In-situ control of temperature and alloy composition of Cd1–xZnxTe grown by molecular beam epitaxy,” Journal of Electronic Materials 29(6), 742-747 (2000).
http://dx.doi.org/10.1007/s11664-000-0218-x
12.
Y. Chang et al., “Near-bandgap infrared absorption properties of HgCdTe,” Journal of electronic materials 33(6), 709-713 (2004).
http://dx.doi.org/10.1007/s11664-004-0070-5
13.
W.E. Tennant et al., “Key issues in HgCdTe-based focal plane arrays: An industry perspective,” Journal of Vacuum Science & Technology B 10(4), 1359-1369 (1992).
http://dx.doi.org/10.1116/1.585869
14.
J. Arias et al., “Molecular-beam epitaxy growth and insitu arsenic doping of p-on-n HgCdTe heterojunctions,” Journal of applied physics 69(4), 2143-2148 (1991).
http://dx.doi.org/10.1063/1.348741
15.
G. Badano et al., “In-situ ellipsometry studies of adsorption of Hg on CdTe (211) B/Si (211) and molecular beam epitaxy growth of HgCdTe (211) B,” Journal of electronic materials 33(6), 583-589 (2004).
http://dx.doi.org/10.1007/s11664-004-0050-9
16.
J. Wenisch et al., “Evaluation of HgCdTe on GaAs Grown by Molecular Beam Epitaxy for High-Operating-Temperature Infrared Detector Applications,” Journal of Electronic Materials 1-5 (2015).
17.
L. Li et al., “In-assisted desorption of native GaAs surface oxides,” Applied Physics Letters 99(6), 061910 (2011).
http://dx.doi.org/10.1063/1.3623424
18.
R. Jacobs et al., “Development of MBE II–VI Epilayers on GaAs (211) B,” Journal of electronic materials 41(10), 2707-2713 (2012).
http://dx.doi.org/10.1007/s11664-012-2218-z
19.
O. Arı et al., “MBE-Grown CdTe Layers on GaAs with In-assisted Thermal Deoxidation,” Journal of Electronic Materials 1-6.
20.
M. Rebien et al., “Optical properties of gallium oxide thin films,” Applied physics letters 81(2), 250-252 (2002).
http://dx.doi.org/10.1063/1.1491613
21.
J. Khoshman et al., “Multiple oscillator models for the optical constants of polycrystalline zinc oxide thin films over a wide wavelength range,” Applied Surface Science 307, 558-565 (2014).
http://dx.doi.org/10.1016/j.apsusc.2014.04.073
22.
C.M. Herzinger and B.D. Johs, Dielectric function parametric model, and method of use (Google Patents, 1998).
23.
C.C. Kim and S. Sivananthan, “Modeling the optical dielectric function of II-VI compound CdTe,” Journal of applied physics 78(6), 4003-4010 (1995).
http://dx.doi.org/10.1063/1.359922
24.
P. Etchegoin et al., “Piezo-optical response of Ge in the visible–uv range,” Physical Review B 45(20), 11721 (1992).
http://dx.doi.org/10.1103/PhysRevB.45.11721
25.
A. Ramirez et al., “Giant dielectric constant response in a copper-titanate,” Solid State Communications 115(5), 217-220 (2000).
http://dx.doi.org/10.1016/S0038-1098(00)00182-4
26.
S. Minoura et al., “Dielectric function of Cu (In, Ga) Se2-based polycrystalline materials,” Journal of Applied Physics 113(6), 063505 (2013).
http://dx.doi.org/10.1063/1.4790174
27.
S. L. Ren et al., “Dielectric function of solid C70 films,” Applied physics letters 61(2), 124-126 (1992).
http://dx.doi.org/10.1063/1.108248
28.
D. Aspnes and A. Studna, “Dielectric functions and optical parameters of si, ge, gap, gaas, gasb, inp, inas, and insb from 1.5 to 6.0 ev,” Physical Review B 27(2), 985 (1983).
http://dx.doi.org/10.1103/PhysRevB.27.985
29.
G. Badano et al., “Anisotropic Surface Roughness in Molecular-Beam Epitaxy CdTe (211) B/Ge (211),” Journal of Electronic Materials 37(9), 1369-1375 (2008).
http://dx.doi.org/10.1007/s11664-008-0424-5
30.
S. Fang et al., “Comparison of Si surface roughness measured by atomic force microscopy and ellipsometry,” Applied physics letters 68(20), 2837-2839 (1996).
http://dx.doi.org/10.1063/1.116341
31.
G. Badano, X. Baudry, and I.C. Robin, “In Situ Spectroscopic Ellipsometry of Rough Surfaces: Application to CdTe (211) B/Ge (211) Grown by Molecular-Beam Epitaxy,” Journal of electronic materials 38(8), 1652-1660 (2009).
http://dx.doi.org/10.1007/s11664-009-0783-6
http://aip.metastore.ingenta.com/content/aip/journal/adva/6/7/10.1063/1.4959223
Loading
/content/aip/journal/adva/6/7/10.1063/1.4959223
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/adva/6/7/10.1063/1.4959223
2016-07-15
2016-12-08

Abstract

Spectroscopic ellipsometry (SE) ranging from 1.24 eV to 5.05 eV is used to obtain the film thickness and optical properties of high index (211) CdTe films. A three-layer optical model (oxide/CdTe/GaAs) was chosen for the ex-situ ellipsometric data analysis. Surface roughness cannot be determined by the optical model if oxide is included. We show that roughness can be accurately estimated, without any optical model, by utilizing the correlation between SE data (namely the imaginary part of the dielectric function, > or phase angle, ψ) and atomic force microscopy (AFM) roughness. > and ψ values at 3.31 eV, which corresponds to E critical transition energy of CdTe band structure, are chosen for the correlation since E gives higher resolution than the other critical transition energies. On the other hand, due to the anisotropic characteristic of (211) oriented CdTe surfaces, SE data (<ε > and ψ) shows varieties for different azimuthal angle measurements. For this reason, in order to estimate the surface roughness by considering these correlations, it is shown that SE measurements need to be taken at the same surface azimuthal angle. Estimating surface roughness in this manner is an accurate way to eliminate cumbersome surface roughness measurement by AFM.

Loading

Full text loading...

/deliver/fulltext/aip/journal/adva/6/7/1.4959223.html;jsessionid=SSUnVwWWrkdO44I0zAYSafTc.x-aip-live-03?itemId=/content/aip/journal/adva/6/7/10.1063/1.4959223&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/adva
true
true

Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
/content/realmedia?fmt=ahah&adPositionList=
&advertTargetUrl=//oascentral.aip.org/RealMedia/ads/&sitePageValue=aipadvances.aip.org/6/7/10.1063/1.4959223&pageURL=http://scitation.aip.org/content/aip/journal/adva/6/7/10.1063/1.4959223'
Right1,Right2,Right3,