Skip to main content
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
/content/aip/journal/adva/6/7/10.1063/1.4960213
1.
T. Kimoto, Jap. J. Appl. Phys. 54, 040103 (2015).
http://dx.doi.org/10.7567/JJAP.54.040103
2.
G. Liu, B. R. Tuttle, and S. Dhar, Appl. Phys. Rev. 2, 021307 (2015).
http://dx.doi.org/10.1063/1.4922748
3.
F. Roccaforte, P. Fiorenza, G. Greco, M. Vivona, R. Lo Nigro, F. Giannazzo, A. Patti, and M. Saggio, Appl. Surf. Sci. 301, 9 (2014).
http://dx.doi.org/10.1016/j.apsusc.2014.01.063
4.
B. J. Baliga, Silicon Carbide Power Devices (World Scientific Publishing Co. Pte. Ltd, Singapore, 2005).
5.
F. Zhang, G. Sun, L. Zheng, S. Liu, B. Liu, L. Dong, L. Wang, W. Zhao, X. Liu, G. Yan, L. Tian, and Y. Zen, J. Appl Phys 113, 044112 (2013).
http://dx.doi.org/10.1063/1.4789380
6.
M. Avice, U. Grossner, I. Pintilie, B. G. Svensson, M. Servidori, R. Nipoti, O. Nilsen, and H. Fjellvåg, J. Appl. Phys. 102, 054513 (2007).
http://dx.doi.org/10.1063/1.2778289
7.
H. Moriya, S. Hino, N. Miura, T. Oomori, and E. Tokumitsu, Mater. Sci. Forum. 615-617, 777 (2009).
http://dx.doi.org/10.4028/www.scientific.net/MSF.615-617.777
8.
R. Foest, M Schmidt, and H. Gargouri, Eur. Phys. J. D 68, 23 (2014).
http://dx.doi.org/10.1140/epjd/e2013-40420-y
9.
K. Y. Cheong, J. H. Moon, D. Eom, H. J. Kim, W. Bahng, and N.-K. Kim, Electrochem. Solid-State Lett. 10, H69-H71 (2007).
http://dx.doi.org/10.1149/1.2400728
10.
C. M. Tanner, Y.-C. Perng, C. Frewin, S. E. Saddow, and J. P. Chang, Appl. Phys. Lett. 91, 203510 (2007).
http://dx.doi.org/10.1063/1.2805742
11.
M. Nawaz, Active and Passive Electronic Components Volume 2015, 651527, http://dx.doi.org/10.1155/2015/651527.
12.
R. K. Chanana, K. McDonald, M. Di Ventra, S. T. Pantelides, L. C. Feldman, G. Y. Chung, C. C. Tin, J. R. Williams, and R. A. Weller, Appl. Phys. Lett. 77, 2560 (2000).
http://dx.doi.org/10.1063/1.1318229
13.
P. Fiorenza, A. Frazzetto, A. Guarnera, M. Saggio, and F. Roccaforte, Appl. Phys. Lett. 105, 142108 (2014).
http://dx.doi.org/10.1063/1.4898009
14.
J. Robertson, J. Vac. Sci. Technol. B 18, 1785 (2000).
http://dx.doi.org/10.1116/1.591472
15.
F. Roccaforte, P. Fiorenza, G. Greco, R. Lo Nigro, F. Giannazzo, A. Patti, and M. Saggio, Phys. Status Solidi A 211, 2063 (2014).
http://dx.doi.org/10.1002/pssa.201300558
16.
R. Singh, Microelectron. Reliab. 46, 713 (2006).
http://dx.doi.org/10.1016/j.microrel.2005.10.013
17.
J-C. Chiang and J-G. Hwu, J. Phys. D: Appl. Phys. 45, 345303 (2012).
http://dx.doi.org/10.1088/0022-3727/45/34/345303
18.
D.-K. Kim, Y.-S. Kang, K.-S. Jeong, H.-K. Kang, S. W. Cho, K.-B. Chung, H. Kim, and M.-H. Cho, J. Mater. Chem. C 3, 5078 (2015).
http://dx.doi.org/10.1039/C5TC00076A
19.
T. Hatayama, S. Hino, N. Miura, T. Oomori, and E. Tokumitsu, IEEE Trans. Electr. Dev. 55, 2041 (2008).
http://dx.doi.org/10.1109/TED.2008.926647
20.
D. J. Lichtenwalner, L. Cheng, S. Dhar, A. Agarwal, and J. W. Palmour, Appl. Phys. Lett. 105, 182107 (2014).
http://dx.doi.org/10.1063/1.4901259
21.
P. Fiorenza and V. Raineri, Appl. Phys. Lett. Appl. Phys. Lett. 88, 212112 (2006).
http://dx.doi.org/10.1063/1.2207991
22.
E. Schilirò, G. Greco, P. Fiorenza, C. Tudisco, G. G. Condorelli, S. Di Franco, F. Roccaforte, and R. Lo Nigro, Phys. Status Solidi C 12, 980-984 (2015).
http://dx.doi.org/10.1002/pssc.201510016
23.
R. Lo Nigro, E. Schilirò, G. Greco, P. Fiorenza, and F. Roccaforte, Thin Solid Fillms (in press), doi:10.1016/j.tsf.2016.02.046.
24.
R. Nakamura, M. Ishimaru, H. Yasuda, and H. Nakaijima, J. Appl. Phys. 113, 06312 (2013).
25.
D.K. Schroder, Semiconductor material and device characterization (A Wiley-Interscience Publication, 2006).
26.
G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, R. K. Chanana, R. A. Weller, S. T. Pantelides, and L. C. Feldman, IEEE Electron Device Lett. 22, 176 (2001).
http://dx.doi.org/10.1109/55.915604
27.
M. Choi, A. Janotti, and C. G. Van de Walle, J. Appl. Phys. 113, 044501 (2013).
http://dx.doi.org/10.1063/1.4784114
28.
M. Choi, J. L. Lyons, A. Janotti, and C. G. Van de Walle, Appl. Phys. Lett. 102, 142902 (2013).
http://dx.doi.org/10.1063/1.4801497
http://aip.metastore.ingenta.com/content/aip/journal/adva/6/7/10.1063/1.4960213
Loading
/content/aip/journal/adva/6/7/10.1063/1.4960213
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/adva/6/7/10.1063/1.4960213
2016-07-28
2016-09-25

Abstract

This letter reports on the negative charge trapping in Al O thin films grown by atomic layer deposition onto oxidized silicon carbide (4H-SiC). The films exhibited a permittivity of 8.4, a breakdown field of 9.2 MV/cm and small hysteresis under moderate bias cycles. However, severe electron trapping inside the Al O film (1 × 1012 cm−2) occurs upon high positive bias stress (>10V). Capacitance-voltage measurements at different temperatures and stress conditions have been used to determine an activation energy of 0.1eV. The results provide indications on the possible nature of the trapping defects and, hence, on the strategies to improve this technology for 4H-SiC devices.

Loading

Full text loading...

/deliver/fulltext/aip/journal/adva/6/7/1.4960213.html;jsessionid=VUeWOsJe3LHsiMjICLtUyDns.x-aip-live-03?itemId=/content/aip/journal/adva/6/7/10.1063/1.4960213&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/adva
true
true

Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
/content/realmedia?fmt=ahah&adPositionList=
&advertTargetUrl=//oascentral.aip.org/RealMedia/ads/&sitePageValue=aipadvances.aip.org/6/7/10.1063/1.4960213&pageURL=http://scitation.aip.org/content/aip/journal/adva/6/7/10.1063/1.4960213'
Right1,Right2,Right3,