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Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions
J. M. De Teresa, A. Barthelemy, A. Fert, J. P. Contour, and F. Montaigne, P. Seneor Science 286, 507 (1999).
E. Y. Tsymbal, A. Sokolov, I. F. Sabrianov, and B. Doudin, Phys. Rev.B 90, 186602 (2003).
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Resonant tunneling can lead to inverse tunnel magnetoresistance when impurity levels rather than direct tunneling dominate the transport process. We fabricated hybrid magnetic tunnel junctions of CoFe/LiF/EuS/Ti, with an epitaxial LiF energy barrier joined with a polycrystalline EuS spin-filter barrier. Due to the water solubility of LiF, the devices were fully packaged in situ. The devices showed sizeable positive TMR up to 16% at low bias voltages but clearly inverted TMR at higher bias voltages. The TMR inversion depends sensitively on the thickness of LiF, and the tendency of inversion disappears when LiF gets thick enough and recovers its intrinsic properties.
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