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Fabrication of p-BaSi(20nm)/n-Si heterojunction solar cells was performed with different a-Si capping layer thicknesses ( ) and varying air exposure durations ( ) prior to the formation of a 70-nm-thick indium-tin-oxide electrode. The conversion efficiencies () reached approximately 4.7% regardless of (varying from 12–150 h) for solar cells with = 5 nm. In contrast, increased from 5.3 to 6.6% with increasing for those with = 2 nm, in contrast to our prediction. For this sample, the reverse saturation current density ( ) and diode ideality factor decreased with , resulting in the enhancement of . The effects of the variation of (0.7, 2, 3, and 5 nm) upon the solar cell performance were examined while keeping = 150 h. The reached a maximum of 9.0% when was 3 nm, wherein the open-circuit voltage and fill factor also reached a maximum. The series resistance, shunt resistance, and exhibited a tendency to decrease as increased. These results demonstrate that a moderate oxidation of BaSi is a very effective means to enhance the of BaSi solar cells.


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