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Influence of air exposure duration and a-Si capping layer thickness on the performance of p-BaSi2
/n-Si heterojunction solar cells
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Fabrication of p-BaSi2(20nm)/n-Si heterojunction
solar cells was performed with different a-Si capping layer thicknesses (d
a-Si) and varying air exposure durations (t
air) prior to the formation of a 70-nm-thick indium-tin-oxide electrode. The conversion efficiencies (η) reached approximately 4.7% regardless of t
air (varying from 12–150 h) for solar cells with d
a-Si = 5 nm. In contrast, η increased from 5.3 to 6.6% with increasing t
air for those with d
a-Si = 2 nm, in contrast to our prediction. For this sample, the reverse saturation current density (J
0) and diode ideality factor decreased with t
air, resulting in the enhancement of η. The effects of the variation of d
a-Si (0.7, 2, 3, and 5 nm) upon the solar cell performance were examined while keeping t
air = 150 h. The η reached a maximum of 9.0% when d
a-Si was 3 nm, wherein the open-circuit voltage and fill factor also reached a maximum. The series resistance, shunt resistance, and J
0 exhibited a tendency to decrease as d
a-Si increased. These results demonstrate that a moderate oxidation of BaSi2 is a very effective means to enhance the η of BaSi2
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