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Anomalous Hall effect in Znx
: Universal scaling law and electron localization below the Verwey transition
J. Takaobushi, H. Tanaka, T. Kawai, S. Ueda, J.-J. Kim, M. Kobata, E. Ikenaga, M. Yabashi, K. Kobayashi, Y. Nishino, D. Miwa, K. Tamasaku, and T. Ishikawa, Appl. Phys. Lett. 89, 242507 (2006).
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A. Bosak, D. Chernyshov, M. Hoesch, P. Piekarz, M. Le Tacon, M. Krisch, A. Kozłowski, A. M. Oleś, and K. Parlinski, Phys. Rev. X 4, 011040 (2014).
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We show that the well-established universal scaling σxy
AHE ∼ σxx
1.6 between anomalous Hall and longitudinal conductivities in the low conductivity regime (σxx < 104 Ω−1 cm−1) transforms into the scaling σxy
AHE ∼ σxx
2 at the onset of strong electron localization. The crossover between the two relations is observed in magnetite-derived Zn
thin films where an insulating/hopping regime follows a bad metal/hopping regime below the Verwey transition
temperature Tv. Our results demonstrate that electron localization effects come into play in the anomalous Hall effect (AHE) modifying significantly the scaling exponent. In addition, the thermal evolution of the anomalous Hall resistivity suggests the existence of spin polarons whose size would decrease below Tv.
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