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1.
R Waser, R Dittmann, G Staikov, and K Szot, Adv.Mater. 21, 2632 (2009).
http://dx.doi.org/10.1002/adma.200900375
2.
Y T Li, H B Lv, Q Liu, S B Long, M Wang, H W Xie, K W Zhang, Z L Huo, and M Liu, Nanoscale 5, 4785 (2013).
http://dx.doi.org/10.1039/c3nr33370a
3.
J J Yang, M X Zhang, J P Strachan, F Miao, M D Pickett, R D Kelley, G Medeiros-Ribeiro, and R S Williams, Appl. Phys. Lett. 97, 232102 (2010).
http://dx.doi.org/10.1063/1.3524521
4.
Y E Syu, T C Chang, T M Tsai, Y C Hung, K C Chang, M J Tsai, K Ming-Jer, and S M Sze, IEEE Electron Device Lett. 32, 545 (2011).
http://dx.doi.org/10.1109/LED.2011.2104936
5.
X J Zhu, W J Su, Y W Liu, B L Hu, L Pan, W Lu, J D Zhang, and R W Li, Adv. Mater. 24, 3941 (2012).
http://dx.doi.org/10.1002/adma.201201506
6.
M Y Zhang, S B Long, G M Wang, X X Xu, Y Li, Q Liu, H B Lv, X J Lian, E Miranda, J Sune, and M Liu, Appl. Phys. Lett. 105, 193501 (2014).
http://dx.doi.org/10.1063/1.4901530
7.
J Kim, H Na, S Lee, Y H Sung, J H Yoo, D S Lee, D H Ko, and H Sohn, Curr. Appl. Phys. 11, e70 (2011).
http://dx.doi.org/10.1016/j.cap.2010.11.126
8.
J.X. zheng, G. Ceder, T. Maxisch, W.K. Chimand, and W.K. Choi, PhysRevB. 75, 104112 (2007).
9.
X Y Lei, H X Liu, H X Gao, H N Yang, G M Wang, S B Long, X H Ma, and M Liu, Chin. Phys. B 23, 117305 (2014).
http://dx.doi.org/10.1088/1674-1056/23/11/117305
10.
X Z Tian, S Z Yang, M Zeng, L F Wang, J K Wei, Z Xu, W L Wang, and X D Bai, Adv. Mater. 26, 3649 (2014).
http://dx.doi.org/10.1002/adma.201400127
11.
L G Zhu, Q M Hu, and R Yang, J. Phys.: Condens. Matter 26, 055602 (2014).
http://dx.doi.org/10.1088/0953-8984/26/5/055602
12.
Tingkun Gu, Zhongchang wang, Tomofumi Tada, and Satoshi Watanabe, J.Appl.Phys. 106, 103713 (2009).
http://dx.doi.org/10.1063/1.3260244
13.
Samuele Porro, Eugenio Accornero, Candido Fabrizio Pirri, and Carlo Ricciardi, Carbon 85, 383-396 (2015).
http://dx.doi.org/10.1016/j.carbon.2015.01.011
14.
Y Wang, Q Liu, S Long, W Wang, and Q Wang, Nanotech. 21, 045202 (2010).
http://dx.doi.org/10.1088/0957-4484/21/4/045202
15.
H T Sun, Q Liu, C F Li, S B Long, H B Lv, C Bi, Z L Huo, L Li, and M Liu, Adv. Funct. Mater. 24, 5679 (2014).
http://dx.doi.org/10.1002/adfm.201401304
16.
A Sleiman, P W Sayers, and M F Mabrook, J. Appl.Phys 113, 164506 (2013).
http://dx.doi.org/10.1063/1.4803062
17.
G. Dearnaley, A. M. Stoneham, and D. V. Morgan, Rep. Prog. Phys. 33, 1129 (1970).
http://dx.doi.org/10.1088/0034-4885/33/3/306
18.
Blanka Magyari-Köpe, Seong Geon Park, Hyung-Dong Lee, and Yoshio Nishi, J Mater Sci 47, 7498 (2012).
http://dx.doi.org/10.1007/s10853-012-6638-1
19.
Seong-Geon Park, Blanka Magyari-Köpe, and Yoshio Nishi, IEEE ELECTRON DEVICE LETTERS. 32, 2 (2011).
http://dx.doi.org/10.1109/LED.2011.2176634
20.
R E Hann, P R Suitch, and J L Pentecost, J. Am.Ceram. Soc. 68, C-285 (1985).
http://dx.doi.org/10.1111/j.1151-2916.1985.tb11534.x
21.
B Delley, J . Chem. Phys. 113, 7756 (2000).
http://dx.doi.org/10.1063/1.1316015
22.
J C Liu, X M Zhang, M A Chen, J G Tang, and S D Liu, Acta Phys. Sin. 59, 5641 (2010).
23.
N Govind, M Petersen, G Fitzgerald, D King-Smith, and J Andzelm, Comp. Mater. Sci. 28, 250 (2003).
http://dx.doi.org/10.1016/S0927-0256(03)00111-3
24.
G Kresse and J Furthmüller, Comp. Mater. Sci. 6, 15 (1996).
http://dx.doi.org/10.1016/0927-0256(96)00008-0
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/content/aip/journal/adva/6/8/10.1063/1.4961229
2016-08-12
2016-12-04

Abstract

The work investigated the shape and orientation of oxygen vacancy clusters in HfO-base resistive random access memory (ReRAM) by using the first-principle method based on the density functional theory. Firstly, the formation energy of different local Vo clusters was calculated in four established orientation systems. Then, the optimized orientation and charger conductor shape were identified by comparing the isosurface plots of partial charge density, formation energy, and the highest isosurface value of oxygen vacancy. The calculated results revealed that the [010] orientation was the optimal migration path of Vo, and the shape of system D4 was the best charge conductor in HfO, which effectively influenced the SET voltage, formation voltage and the ON/OFF ratio of the device. Afterwards, the PDOS of Hf near Vo and total density of states of the system D4_010 were obtained, revealing the composition of charge conductor was oxygen vacancy instead of metal Hf. Furthermore, the migration barriers of the Vo hopping between neighboring unit cells were calculated along four different orientations. The motion was proved along [010] orientation. The optimal circulation path for Vo migration in the HfO super-cell was obtained.

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