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/content/aip/journal/adva/6/8/10.1063/1.4961639
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/content/aip/journal/adva/6/8/10.1063/1.4961639
2016-08-19
2016-12-04

Abstract

Rare-earth iron oxides (RFeO) have attracting attention as new electronic device materials because of their numerous functionalities, such as electronic ferroelectricity, ferrimagnetism, and high infrared absorption. In this paper, nearly monophasic Y bFeO films were prepared on α-AlO(001) substrates by the spin coating method using an aqueous-based Y bFeO solution. The solution was composed of a stoichiometric ratio of Y b(CHCOO) and Fe(NO) with excess chelating agents. After heat treatment above 800 °C, well-crystallized and highly (001)-oriented Y bFeO started to epitaxially form on the substrate under controlled oxygen partial pressure with H/CO gas mixtures. X-ray pole figure analysis confirmed the following epitaxial relationship: Y bFeO[100](001)//α-AlO[100](001). Moreover formation of an FeO interracial layer between Y bFeO and α-AlO was detected by high-resolution transmission electron microscopy. Presence of the FeO interracial layer seemed to release the lattice misfit with the substrate. The Fe2+/Fe3+ ratio in the obtained Y bFeO films was nearly stoichiometric and the indirect bandgap assigned to Fe2+ → Fe3+ charge transfer excitation was found to be ∼0.4 eV by optical spectroscopy. A clear magnetic transition from the paramagnetic state to the ferrimagnetic state occurred at ∼230 K.

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