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Solution-processed oxide semiconductors are promising candidates for the low cost, large scale fabrication of oxide thin-film transistors (TFTs). In this work, a method using hydrogen injection and oxidation (HIO) that allows the low temperature solution processing of oxide semiconductors was demonstrated. We found that this method significantly decreases the concentration of residual species while improving the film densification. Additionally, enhanced TFT performance was confirmed following the use of processing temperatures as low as 300 °C. The proposed process is potentially applicable to the fabrication of a wide variety of solution-processed oxide semiconductors.


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