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K. J. Kuhn, M. Y. Liu, and H. Kennel, in Proceeding of the 10th International Workshop on Junction Technology (IWJT-2010), Shanghai, China, 10-11 May 2010 (IEEE 2010), pp. 1011.
S. E. Thompson, M. Armstrong, C. Auth, M. Alavi, M. Buehler, R. Chau, S. Cea, T. Ghani, G. Glass, T. Hoffman, C.-H. Jan, C. Kenyon, J. Klaus, K. Kuhn, Z. Ma, B. Mcintyre, K. Mistry, A. Murthy, B. Obradovic, R. Nagisetty, P. Nguyen, S. Sivakumar, R. Shaheed, L. Shifren, B. Tufts, S. Tyagi, M. Bohr, and Y. El-Mansy, IEEE Trans. Elect. Dev. 51, 1790 (2004).
P. Sookchoo, F. F. Sudradjat, A. M. Kiefer, H. Durmaz, R. Paiella, and M. G. Lagally, ACS nano 7(3), 2326 (2013).
P. Hashemi, K. Balakrishnan, A. Majumdar, A. Khakifirooz, W. Kim, A. Baraskar, L. A. Yang, K. Chan, S. U. Engelmann, J. A. Ott, D. A. Antoniadis, E. Leobandung, and D.-G. Park, in VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on, Honolulu, USA, 9-12 June 2014 (IEEE 2014), pp. 12.
S.-W. Kim, J. Yoo, S. Koo, D.-H. Ko, and H. Lee, ECS Trans. 41(7), 175 (2011).
M. Schmidt, M. J. Süess, A. D. Barros, R. Geiger, H. Sigg, R. Spolenak, and R. A. Minamisawa, IEEE Electron Device Letters 35, 300 (2014).
F. Conzatti, N. Serra, D. Esseni, M. D. Michielis, A. Paussa, P. Palestri, L. Selmi, S. M. Thomas, T. E. Whall, D. Leadley, E. H. C. Parker, L. Witters, M. J. Hytch, E. Snoeck, T. J. Wang, W. C. Lee, G. Doornbos, G. Vellianitis, M. J. H. van Dal, and R. J. P. Lander, Electron Devices, IEEE Transactions 58(6), 1583 (2011).
K. Usuda, T. Mizuno, T. Tezuka, N. Sugiyama, Y. Moriyama, S. Nakaharai, and S.-I. Takagi, Appl. Surf. Sci. 224, 113 (2004).
A. Béché, J. L. Rouvière, L. Clément, and J. M. Hartmann, Appl. Phys. Letts. 95, 123114 (2009).
F. Uesugi, A. Hokazono, and S. Takeno, Ultramicroscopy 111(8), 995 (2011).
B. Kim, S.-W. Kim, H. Jang, J.-H. Kim, S. Koo, D.-H. Kim, B.-G. Min, and D.-H. Ko, Thin Solid Films 557, 5560 (2014).
B. Kim, S.-W. Kim, H. Jang, J.-H. Kim, S. Koo, D.-H. Kim, B.-G. Min, S.-J. Park, J. S. Song, and D.-H. Ko, Journal of Crystal Growth 401, 308 (2014).
S.-W. Kim, D.-S. Byeon, H. Jang, S.-M. Koo, H.-J. Lee, and D.-H. Ko, Applied Physics Letters 105(8), 83104 (2014).
M. Bauer, C. Arena, R. Bertram, P. Tomasini, N. Cody, P. Brabant, J. Italiano, P. Jacobson, and K. Weeks, U.S. patent 7,816,236 B2 (19 October 2010).
P. Verheyen, V. Machkaoutsan, M. Bauer, D. Weeks, C. Kerner, F. Clemente, H. Bender, D. Shamiryan, R. Koo, T. Hoffmann, P. Absil, S. Biesemans, and S. G. Thomas, IEEE Electron Device Letters 29, 1206 (2008).
S. Koo, J.-H. Yoo, S.-W. Kim, and D.-H. Ko, Journal of Nanoscience and Nanotechnology 14, 7641 (2014).
M. Bauer and S. G. Thomas, Thin Solid Films 520, 3133 (2012).
J. P. Dismukes, L. Ekstrom, and R. J. Paff, The Journal of Physical Chemistry 68.10, 3021 (1964).
J. M. Hartmann, V. Benevent, A. Andre, C. Sirisopanaporn, M. Veillerot, M. P. Samson, S. Barraud, Z. Essa, and B. Sermage, ECS Journal of Solid State Science and Technology 3(11), 382 (2014).
H. He, P. Brabant, K. Chung, M. Shinriki, T. Adam, A. Reznicek, D. Sadana, S. Hasaka, and T. Francis, Thin Solid Films 520, 3175 (2012).
P. Rai-Choudhury and D. K. Schroder, Journal of The Electrochemical Society 120.5, 664 (1973).
M. L. Lee, D. A. Antoniadis, and E. A. Fitzgeraldet, Thin Solid Films 508.1, 136 (2006).
J. M. Hartmann, M. Burdin, G. Rolland, and T. Billon, Journal of crystal growth 294.2, 288 (2006).
V. Destefanis, J. M. Hartmann, A. Abbadie, A. M. Papon, and T. Billon, Journal of Crystal Growth 311, 1070 (2009).
T. I. Kamins, J. Appl. Phys. 74(9), 5799 (1993).
S. Bodnar, E. de Berranger, P. Bouillon, M. Mouis, T. Skotnicki, and J. L. Regolini, J. Vac. Sci. Technol. B 15(3), 712 (1997).
C. Menon, A. Bentzen, and H. H. Radamson, J. Appl. Phys. 90(9), 4806 (2001).
R. Loo and M. Caymax, Applied Surface Science 224, 24 (2004).
Y. He, H. Tu, J. Lin, H. Song, J. Wang, G. Ma, W. Xu, B. Ye, T. Yu, and J. Wu, ECS Transactions 34(1), 731736 (2011).
J. W. Matthews and A. E. Blakeslee, Journal of Crystal Growth 27, 118 (1974).
E. A. Fitzgerald, Materials Science Reports 7, 87 (1991).
P. M. Mooney, Materials Science and Engineering R17, 105 (1996).
Y. Chen, Z. Liliental-Weber, J. Washburn, J. F. Klem, and J. Y. Tsao, Applied Physics Letters 66(4), 499 (2001).
D. Cooper, A. Béché, J. M. Hartmann, V. Carron, and J.-L. Rouvière, Semicond. Sci. Technol. 25, 095012 (2010).
T. Denneulin, D. Cooper, J.-M. Hartmann, and J.-L. Rouvière, J. Appl. Phys. 112, 094314 (2012).
S.-W. Kim, D.-S. Byun, M. Jung, S. Chopra, Y. Kim, J.-H. Kim, S.-M. Han, D.-H. Ko, and H.-J. Lee, Applied Physics Express 6, 066601 (2013).
D.-S. Byeon, S.-W. Kim, and D.-H. Ko, Journal of Nanoscience and Nanotechnology 14, 7679 (2014).
N. Tamura and Y. Shimamune, Applied Surface Science 254, 6067 (2008).
F. Hue, M. Hytch, F. Houdellier, H. Bender, and A. Claverie, Appl. Phys. Letts. 95, 073103 (2009).
S.-W. Kim, J.-H. Yoo, S.-M. Koo, D.-H. Ko, and H.-J. Lee, Appl. Phys. Letts. 99, 133107 (2011).
J.-H. Yoo, S.-W. Kim, S.-M. Koo, D.-H. Ko, and H.-J. Lee, Appl. Phys. Letts. 98, 133121 (2011).

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The selective epitaxial growth of Si Ge and the related strain properties were studied. Epitaxial Si Ge films were deposited on (100) and (110) orientation wafers and on patterned Si wafers with recessed source and drain structures via ultrahigh vacuum chemical vapor deposition using different growing steps and Ge concentrations. The stepwise process was split into more than 6 growing steps that ranged in thicknesses from a few to 120 nm in order to cover the wide stages of epitaxial growth. The growth rates of SiGe on the plane and patterned wafers were examined and a dependence on the surface orientation was identified. As the germanium concentration increased, defects were generated with thinner Si Ge growth. The defect generation was the result of the strain evolution which was examined for channel regions with a Si Ge source/drain (S/D) structure.


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