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/content/aip/journal/adva/6/9/10.1063/1.4963740
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/content/aip/journal/adva/6/9/10.1063/1.4963740
2016-09-22
2016-12-10

Abstract

In this paper, the trap behaviours in AlGaN/GaN high electron mobility transistors (HEMTs) are investigated using transient capacitance measurement. By measuring the transient gate capacitance variance with different pulse height, the gate pulse induced trap behaviours in SiN gate dielectric layer or at the SiN/AlGaN interface is revealed. Based on the results, a model on electron traps in AlGaN/GaN HEMTs is proposed. The threshold voltage (V) instability in AlGaN/GaN HEMTs is believed to be correlated with the presence of these traps in SiN gate dielectric layer or at the SiN/AlGaN interface. Furthermore, trap density before and after step-stress applied on drain electrode is quantitatively analyzed based on measurement.

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