Skip to main content
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
F. Sacconi, A. D. Carlo, P. Lugli, and H. Morkoc, IEEE Trans. Electron Devices 48, 450 (2001).
M. Trivedi and K. Shenai, J. Appl. Phys. 85, 6889 (1999).
R. Chu, A. Corrion, M. Chen, R. Li, D. Wong, D. Zehander, B. Hughes, and K. Boutros, IEEE Electron Device Lett. 32, 632 (2011).
M. Diego, L. Lorenzo, C. Jean-François, M. Marco, G. Nicolas, and C. R. Bolognesi, IEEE Electron Device Lett. 37(8), 1025 (2016).
C. T. Yeh, W. K. Wang, Y. S. Shen, and R. H. Horng, Japan. J. Appl. Phys 55(5), 05FK06 (2016).
T. Nagahisa, H. Ichijoh, and T. Suzuki, Japan. J. Appl. Phys 55(4), 04EG01 (2016).
J. Tardy, M. Erouel, A. L. Deman, A. Gagnaire, V. Teodorescu, M. G. Blanchin, B. Canut, A. Barau, and M. Zaharescu, Microeletron Reliab 47(2–3), 372 (2007).
N. C. Su, S. J. Wang, and A. Chin, IEEE Electron Device Lett 30(12), 1317 (2009).
N. Killat, M. M. Bajo, T. Paskova, K. Evans, J. Leach, X. Li, Ü. Özgür, H. Morkoç, K. Chabak, and A. Crespo, Applied Physics Letters 103(19), 193507 (2013).
T. Katsuno, T. Manaka, T. Ishikawa, H. Ueda, T. Uesugi, and M. Iwamoto, Applied Physics Letters 104(25), 252112 (2014).
T.-L. Wu, D. Marcon, B. Bakeroot, B. De Jaeger, H. Lin, J. Franco, S. Stoffels, M. Van Hove, R. Roelofs, and G. Groeseneken, Applied Physics Letters 107(9), 093507 (2015).
Y. Chen, X. Ma, W. Chen, B. Hou, J. Zhang, and Y. Hao, AIP Advances 5(9), 097154 (2015).
J. Yang, S. Cui, T. Ma, T.-H. Hung, D. Nath, S. Krishnamoorthy, and S. Rajan, Applied Physics Letters 103(22), 223507 (2013).
H. Rao and G. Bosman, J. Appl. Phys. 106(10), 103712 (2009).
C. Kayis, C. Zhu, M. Wu, X. Li, Ü. Özgür, and H. Morkoç, J. Appl. Phys. 109(8), 084522 (2011).
T. Roy, E. Zhang, Y. Puzyrev, X. Shen, D. Fleetwood, R. Schrimpf, G. Koblmueller, R. Chu, C. Poblenz, and N. Fichtenbaum, Applied Physics Letters 99(20), 203501 (2011).
D. K. Sahoo, R. K. Lal, H. Kim, V. Tilak, and L. F. Eastman, IEEE Transactions on Electron Devices 50(5), 11631170 (2003).
M. Ťapajna, O. Hilt, E. Bahat-Treidel, J. Würfl, and J. Kuzmík, Applied Physics Letters 107(19), 193506 (2015).
B.-J. Kim, Y.-H. Hwang, S. Ahn, W. Zhu, C. Dong, L. Lu, F. Ren, M. Holzworth, K. S. Jones, and S. J. Pearton, Applied Physics Letters 106(15), 153504 (2015).
Y. Nakano, Y. Irokawa, and M. Takeguchi, Appl. Phys. Express 1(9), 091101 (2008).
A. Sasikumar, D. Cardwell, A. Arehart, J. Lu, S. Kaun, S. Keller, U. Mishra, J. Speck, J. Pelz, and S. Ringel, presented at the 2014 IEEE International Reliability Physics Symposium, 2014 (unpublished).
A. Arehart, A. Sasikumar, S. Rajan, G. Via, B. Poling, B. Winningham, E. Heller, D. Brown, Y. Pei, and F. Recht, Solid-State Electronics 80, 1922 (2013).
F. Jabli, M. A. Zaidi, N. B. Hamadi, S. Althoyaib, and M. Gassoumi, Journal of Alloys and Compounds 653, 624628 (2015).
M. Anand, G. Ng, S. Arulkumaran, C. M. Kumar, K. Ranjan, S. Vicknesh, S. Foo, B. Syamal, and X. Zhou, Applied Physics Letters 106(8), 083508 (2015).
H. Mosbahi, M. Gassoumi, M. Charfeddine, M. Zaidi, C. Gaquiere, and H. Maaref, Journal of Optoelectronics and Advanced Materials 12(11), 2190 (2010).
H. Chandrasekar, M. Singh, S. Raghavan, and N. Bhat, Semiconductor Science and Technology 30(11), 115018 (2015).
X. S. Nguyen, K. Lin, Z. Zhang, B. McSkimming, A. Arehart, J. Speck, S. Ringel, E. A. Fitzgerald, and S. Chua, Applied Physics Letters 106(10), 102101 (2015).
A. Y. Polyakov, N. B. Smirnov, C. H. Roh, C.-K. Hahn, H.-S. Cho, E. A. Kozhukhova, A. V. Govorkov, R. V. Ryzhuk, N. I. Kargin, and I.-H. Lee, IEEE Transactions on Nanotechnology 13(1), 151159 (2014).

Data & Media loading...


Article metrics loading...



In this paper, the trap behaviours in AlGaN/GaN high electron mobility transistors (HEMTs) are investigated using transient capacitance measurement. By measuring the transient gate capacitance variance with different pulse height, the gate pulse induced trap behaviours in SiN gate dielectric layer or at the SiN/AlGaN interface is revealed. Based on the results, a model on electron traps in AlGaN/GaN HEMTs is proposed. The threshold voltage (V) instability in AlGaN/GaN HEMTs is believed to be correlated with the presence of these traps in SiN gate dielectric layer or at the SiN/AlGaN interface. Furthermore, trap density before and after step-stress applied on drain electrode is quantitatively analyzed based on measurement.


Full text loading...


Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd