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Tunneling magnetoresistance oscillations due to charging effects in MgO double barrier magnetic tunnel junctions
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10.1063/1.3673557
/content/aip/journal/apl/100/1/10.1063/1.3673557
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/1/10.1063/1.3673557
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic diagram of a MgO double barrier magnetic tunnel junction. (b) Cross-section HRTEM image of an annealed MgO double barrier MTJ film stack with the following structure: Si/SiO2/Ta,10 nm/IrMn, 30 nm/CoFe, 3.5 nm/MgO, 2.6 nm/CoFe, 2.2 nm/MgO, 2.2 nm/Ta, 5 nm/Ru, 5 nm/. (c) Top-view SEM image of a MgO double barrier magnetic tunnel junction. The diameter of the structure is 40 nm.

Image of FIG. 2.
FIG. 2.

(Color online) 3D plots of differential conductance as a function of voltage and magnetic field for MgO double barrier MTJs with (a) asymmetric tunnel barrier thicknesses and (b) symmetric barrier thicknesses. The measurements were carried out at 275 mK. Here, the schematic insets show the MgO barrier thickness configurations of the DBMTJs.

Image of FIG. 3.
FIG. 3.

(Color online) TMR as a function of voltage for MgO double barrier MTJs with (a) asymmetric barrier thicknesses (the inset shows a dependence of the TMR oscillation period on the size of the DBMTJ devices) and (b) symmetric tunnel barrier thicknesses.

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/content/aip/journal/apl/100/1/10.1063/1.3673557
2012-01-03
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tunneling magnetoresistance oscillations due to charging effects in MgO double barrier magnetic tunnel junctions
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/1/10.1063/1.3673557
10.1063/1.3673557
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