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Single lateral mode mid-infrared laser diode using wavelength-scale modulation of the facet reflectivity
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10.1063/1.3673824
/content/aip/journal/apl/100/1/10.1063/1.3673824
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/1/10.1063/1.3673824
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic cross-section of the laser diodes and (b) image taken in the focused ion beam system showing the array of apertures patterned in the metal. The arrow in (b) indicates the approximate vertical position of the quantum wells.

Image of FIG. 2.
FIG. 2.

Measured emission spectra (a) before and (b) after modification of the emitting facet.

Image of FIG. 3.
FIG. 3.

(Color online) Reflectance of each lateral TE mode. The inset shows a schematic representation of the model used to calculate the reflectivity (RM: reflection monitor, MS: mode source).

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/content/aip/journal/apl/100/1/10.1063/1.3673824
2012-01-03
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Single lateral mode mid-infrared laser diode using wavelength-scale modulation of the facet reflectivity
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/1/10.1063/1.3673824
10.1063/1.3673824
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