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Reduction of charge injection barrier by 1-nm contact oxide interlayer in organic field effect transistors
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The enhancement of the charge injection process by the insertion of an ultrathin (∼1 nm) contact oxide interlayer (COI) at the metal/organic material interface in organic field effect transistors(OFETs) is reported. Six different oxides were used as COI, and Al2O3 was found to exhibit the highest OFETmobility with a reduction in the average contact resistance (R c) from 19.9 to 1.9 kΩ·cm. Photoelectron yield spectroscopy analysis revealed that the insertion of COI increases the work function of an Au contact and reduces the charge injection barrier at the interface, which lowers R c and, therefore, results in enhanced device performance.
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