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XPS narrow scans of Ga 2p3, Hf 4f, and valence band spectra of the 2000 Å IGZO/Si substrate and the 300 Å HfO2/IGZO/Si.
Core level survey spectra of HfO2, 35 Å layer of HfO2 on IGZO, and IGZO/Si at a pass energy of 89.45 eV and a take-off angle of 45°.
Plot of (αhν)2 as a function of hν-E gap for ∼9500 Å HfO2 on a quartz slide glass.
Energy band diagram of a thin HFO2/IGZO heterojunction interface. ΔE B is the corresponding core level separation measured across the interface.
Values of band offsets determined in these experiments (eV).
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