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Band offsets in HfO2/InGaZnO4 heterojunctions
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10.1063/1.3673905
/content/aip/journal/apl/100/1/10.1063/1.3673905
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/1/10.1063/1.3673905

Figures

Image of FIG. 1.
FIG. 1.

XPS narrow scans of Ga 2p3, Hf 4f, and valence band spectra of the 2000 Å IGZO/Si substrate and the 300 Å HfO2/IGZO/Si.

Image of FIG. 2.
FIG. 2.

Core level survey spectra of HfO2, 35 Å layer of HfO2 on IGZO, and IGZO/Si at a pass energy of 89.45 eV and a take-off angle of 45°.

Image of FIG. 3.
FIG. 3.

Plot of (αhν)2 as a function of hν-E gap for ∼9500 Å HfO2 on a quartz slide glass.

Image of FIG. 4.
FIG. 4.

Energy band diagram of a thin HFO2/IGZO heterojunction interface. ΔE B is the corresponding core level separation measured across the interface.

Tables

Generic image for table
Table I.

Values of band offsets determined in these experiments (eV).

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/content/aip/journal/apl/100/1/10.1063/1.3673905
2012-01-04
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Band offsets in HfO2/InGaZnO4 heterojunctions
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/1/10.1063/1.3673905
10.1063/1.3673905
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