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Growth temperature dependence of exciton lifetime in wurtzite InP nanowires grown on silicon substrates
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10.1063/1.3674985
/content/aip/journal/apl/100/1/10.1063/1.3674985
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/1/10.1063/1.3674985
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Transmission electron microscopy images of samples S340, S380, S420, and S460 showing InP NWs with wurtzite structure and few zinc-blende segments.

Image of FIG. 2.
FIG. 2.

(Color online) (a) PL spectra of the samples at 14 K and μ-PL spectrum of a single NW at 10 K. (b) Time-resolved PL performed on the Wz peaks at 14 K with a 2.4 μJ/cm2 excitation power. The curves are normalized and offset for a better visibility.

Image of FIG. 3.
FIG. 3.

(Color online) Linewidth of the Wz peak as a function of the excitation power. Spectra of the sample S380 are shown in inset.

Image of FIG. 4.
FIG. 4.

(Color online) Wz exciton lifetime of the samples S340, S380, and S420 as a function of the excitation power.

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/content/aip/journal/apl/100/1/10.1063/1.3674985
2012-01-04
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth temperature dependence of exciton lifetime in wurtzite InP nanowires grown on silicon substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/1/10.1063/1.3674985
10.1063/1.3674985
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