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RHEED pattern in the  azimuth at various stages of AlSb on GaAs (001) epitaxy. (a) Exposure of GaAs to antimony at 600 °C resulting in a (2 × 8) reconstruction. (b) Spot pattern indicative of 3D island nucleation. (c) Initial stage of island coalescence after deposition of 20 ML. (d) Pattern indicative of island coalescence and progress towards surface planarization after 40 ML of AlSb on GaAs.
Bright field 220 TEM image of the misfit dislocation array at the AlSb/GaAs interface.
(Color online) (a) High resolution TEM detail of the IMF array at the AlSb/GaAs interface. (b) Map of the lattice distortion using geometric phase methodology. (c) Average in plane lattice parameter for the rectangular region highlighted in (b).
(Color online) Accumulated stress as measured from the substrate deflection during growth of AlSb on GaAs.
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