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(Color online) Topographic (left) and CAFM (right) 15 μm × 15 μm images of Nb/BSTO bilayers grown over Si with different BSTO thicknesses (0.67 nm (1), 0.83 nm (2), and 1 nm (3)).
(Color online) CAFM I(V) curves for the superconducting/insulating bilayers grown over Si. The solid lines are a linear fits of the experimental data (Log(I) = A 0 + α · Log(V)). The inset shows A 0 and α as a function of the barrier thickness (d).
(Color online) I/Vα 0 (Ln(I/Vα 0) = a 0 – d/λ) as a function of the polarization voltage for the Nb/BSTO bilayers with different thicknesses of the insulating layer (d). The inset shows I/Vα 0 as a function of d for a polarization voltage of around 2 V. The line is a linear fit of the experimental data.
(Color online) Experimental (open dots) and simulated (lines) I/Vα 0 distributions for Nb/BSTO bilayers grown over Si, for different BSTO thicknesses.
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