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(Color online) (a) Schematics of the growth temperature, layer structures, and carrier gas for the growth of DC heterostructures and (b) the growth sequence of InAlN barrier layer by PMOCVD.
(Color online) Reciprocal space map around the asymmetric (105) reflection of InAlN/GaN DC heterostructures grown by PMOCVD.
(Color online) Capacitance-voltage (C-V) characteristics of InAlN/GaN/InAlN/GaN DC heterostructures grown by PMOCVD.
(Color online) Temperature-dependent Hall effect measurement results of the InAlN/GaN/InAlN/GaN DC heterostructures. Inset shows surface morphology of InAlN/GaN/InAlN/GaN DC heterostructures measured by AFM with 2 × 2 μm2 scan area.
(Color online) (a) dc IDS(VDS) characteristics of InAlN/GaN DC HEMTs with gate dimensions of 0.8 × 100 μm2 measured at VGS = −10 to 2 V in steps of 2 V (b) dc IDS(VGS) at VDS = 7 V with Gm(VGS) of the same transistor.
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