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Pulsed metal organic chemical vapor deposition of nearly latticed-matched InAlN/GaN/InAlN/GaN double-channel high electron mobility transistors
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10.1063/1.3675453
/content/aip/journal/apl/100/1/10.1063/1.3675453
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/1/10.1063/1.3675453
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematics of the growth temperature, layer structures, and carrier gas for the growth of DC heterostructures and (b) the growth sequence of InAlN barrier layer by PMOCVD.

Image of FIG. 2.
FIG. 2.

(Color online) Reciprocal space map around the asymmetric (105) reflection of InAlN/GaN DC heterostructures grown by PMOCVD.

Image of FIG. 3.
FIG. 3.

(Color online) Capacitance-voltage (C-V) characteristics of InAlN/GaN/InAlN/GaN DC heterostructures grown by PMOCVD.

Image of FIG. 4.
FIG. 4.

(Color online) Temperature-dependent Hall effect measurement results of the InAlN/GaN/InAlN/GaN DC heterostructures. Inset shows surface morphology of InAlN/GaN/InAlN/GaN DC heterostructures measured by AFM with 2 × 2 μm2 scan area.

Image of FIG. 5.
FIG. 5.

(Color online) (a) dc IDS(VDS) characteristics of InAlN/GaN DC HEMTs with gate dimensions of 0.8 × 100 μm2 measured at VGS = −10 to 2 V in steps of 2 V (b) dc IDS(VGS) at VDS = 7 V with Gm(VGS) of the same transistor.

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/content/aip/journal/apl/100/1/10.1063/1.3675453
2012-01-06
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Pulsed metal organic chemical vapor deposition of nearly latticed-matched InAlN/GaN/InAlN/GaN double-channel high electron mobility transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/1/10.1063/1.3675453
10.1063/1.3675453
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