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The effects of organic material-treated SiO2 dielectric surfaces on the electrical characteristics of inorganic amorphous In-Ga-Zn-O thin film transistors
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10.1063/1.3691920
/content/aip/journal/apl/100/10/10.1063/1.3691920
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/10/10.1063/1.3691920

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Chemical structures of the SAMs (left) and the polymer thin films (right) employed as surface modification layers in this study. (Blue color: electron donating, red color: electron withdrawing.) The device structure of a bottom-gated top-contact a-IGZO TFT used in this study (center).

Image of FIG. 2.
FIG. 2.

(Color online) UPS spectra of the surface-modified gate dielectrics with (a) three SAMs and (b) two polymer thin films.

Image of FIG. 3.
FIG. 3.

(Color online) AFM topographs of the a-IGZO films on (a) bare SiO2, APS-, MPS-, PFOTES-treated SiO2 dielectrics, and PVPyr, CYTOP thin-films coated SiO2. (b) A SEM image and corresponding EDS images of Zn, Ga, and In atoms of a-IGZO films deposited on PVPyr-coated SiO2 dielectrics. XRD profiles of a-IGZO films depending on the (c) SAM and (d) polymer.

Image of FIG. 4.
FIG. 4.

(Color online) Drain current–gate voltage (I DV G) transfer characteristics of a-IGZO TFTs with (a) SAM-treated and (b) thin polymer treated SiO2 dielectrics.

Tables

Generic image for table
Table I.

Electrical parameters for a-IGZO TFTs prepared with SAM- and polymer-treated SiO2 dielectrics.

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/content/aip/journal/apl/100/10/10.1063/1.3691920
2012-03-08
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The effects of organic material-treated SiO2 dielectric surfaces on the electrical characteristics of inorganic amorphous In-Ga-Zn-O thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/10/10.1063/1.3691920
10.1063/1.3691920
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