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(Color online) Chemical structures of the SAMs (left) and the polymer thin films (right) employed as surface modification layers in this study. (Blue color: electron donating, red color: electron withdrawing.) The device structure of a bottom-gated top-contact a-IGZO TFT used in this study (center).
(Color online) UPS spectra of the surface-modified gate dielectrics with (a) three SAMs and (b) two polymer thin films.
(Color online) AFM topographs of the a-IGZO films on (a) bare SiO2, APS-, MPS-, PFOTES-treated SiO2 dielectrics, and PVPyr, CYTOP thin-films coated SiO2. (b) A SEM image and corresponding EDS images of Zn, Ga, and In atoms of a-IGZO films deposited on PVPyr-coated SiO2 dielectrics. XRD profiles of a-IGZO films depending on the (c) SAM and (d) polymer.
(Color online) Drain current–gate voltage (I D–V G) transfer characteristics of a-IGZO TFTs with (a) SAM-treated and (b) thin polymer treated SiO2 dielectrics.
Electrical parameters for a-IGZO TFTs prepared with SAM- and polymer-treated SiO2 dielectrics.
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