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C–V characteristics of the a-IGZO MOS diode. Inset shows the structure of MOS diode used in this study.
(Color online) (a) C-t curves as a function of filling pulse width. The conditions for the measurements were biasing voltage at the measurement V = −2 V and pulse height Vp = 5 V (biasing voltage during the filling of traps with electron V = 3 V), respectively. (b) The filling pulse width dependence of the ICTS signal.
(Color online) The biasing voltage dependence of the ICTS signal measured at 180 K. The biasing voltage at the measurement V varied between −5 and 0 V, while the pulse height Vp was fixed at 5 V.
(Color online) The temperature dependence of the ICTS signals for biasing voltages of (a) 0 V and (b) −1 V.
(Color online) Reciprocal temperature dependence of the time constant τ × T 2 determined from the peak position of the ICTS signals for biasing voltages of (a) 0 V and (b) −1 V.
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