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Electron traps in amorphous In–Ga–Zn–O thin films studied by isothermal capacitance transient spectroscopy
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10.1063/1.3691923
/content/aip/journal/apl/100/10/10.1063/1.3691923
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/10/10.1063/1.3691923
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

C–V characteristics of the a-IGZO MOS diode. Inset shows the structure of MOS diode used in this study.

Image of FIG. 2.
FIG. 2.

(Color online) (a) C-t curves as a function of filling pulse width. The conditions for the measurements were biasing voltage at the measurement V = −2 V and pulse height Vp  = 5 V (biasing voltage during the filling of traps with electron V = 3 V), respectively. (b) The filling pulse width dependence of the ICTS signal.

Image of FIG. 3.
FIG. 3.

(Color online) The biasing voltage dependence of the ICTS signal measured at 180 K. The biasing voltage at the measurement V varied between −5 and 0 V, while the pulse height Vp was fixed at 5 V.

Image of FIG. 4.
FIG. 4.

(Color online) The temperature dependence of the ICTS signals for biasing voltages of (a) 0 V and (b) −1 V.

Image of FIG. 5.
FIG. 5.

(Color online) Reciprocal temperature dependence of the time constant τ × T 2 determined from the peak position of the ICTS signals for biasing voltages of (a) 0 V and (b) −1 V.

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/content/aip/journal/apl/100/10/10.1063/1.3691923
2012-03-06
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electron traps in amorphous In–Ga–Zn–O thin films studied by isothermal capacitance transient spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/10/10.1063/1.3691923
10.1063/1.3691923
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