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Temperature evolution of the near band edge PL peak for (a) sSi sample and (b) bulk Si sample.
Indirect bandgap variation (Eg) as function of temperature for bulk Si (circles) and strained Si (squares). The dashed and solid lines represent the fits using the Varshni and Viña et al. models, respectively.
Temperature dependence of strained Si indirect bandgap. The lines represent the fit by Bergman et al. model described from Eq. (3), considering for ED (T), Varshni equation (dashed line), and Viña et al. equation (solid line). The inset depicts the integrated PL intensity evolution as a function of temperature.
(Color online) (a) Cross section TEM image taken under high resolution conditions from sSi sample and (b) Raman mapping image of the Si-Si mode in the strained Si layer.
Values of the parameters Eg , α, and β obtained by fitting the temperature dependence of indirect bandgap in strained Si from the Varshni equation and EB , aB , and Θ parameters from the Viña et al. equation.
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