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Temperature dependence of the indirect bandgap in ultrathin strained silicon on insulator layer
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Image of FIG. 1.
FIG. 1.

Temperature evolution of the near band edge PL peak for (a) sSi sample and (b) bulk Si sample.

Image of FIG. 2.
FIG. 2.

Indirect bandgap variation (Eg) as function of temperature for bulk Si (circles) and strained Si (squares). The dashed and solid lines represent the fits using the Varshni and Viña et al. models, respectively.

Image of FIG. 3.
FIG. 3.

Temperature dependence of strained Si indirect bandgap. The lines represent the fit by Bergman et al. model described from Eq. (3), considering for ED (T), Varshni equation (dashed line), and Viña et al. equation (solid line). The inset depicts the integrated PL intensity evolution as a function of temperature.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Cross section TEM image taken under high resolution conditions from sSi sample and (b) Raman mapping image of the Si-Si mode in the strained Si layer.


Generic image for table
Table I.

Values of the parameters Eg , α, and β obtained by fitting the temperature dependence of indirect bandgap in strained Si from the Varshni equation and EB , aB , and Θ parameters from the Viña et al. equation.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature dependence of the indirect bandgap in ultrathin strained silicon on insulator layer