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Effects of interface disorder on valley splitting in SiGe/Si/SiGe quantum wells
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10.1063/1.3692174
/content/aip/journal/apl/100/10/10.1063/1.3692174
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/10/10.1063/1.3692174
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Validation of TB and strain VFF model by comparison with experimental data. (a) Band edges of bulk SiGe in X and L valleys extracted by unfolding dispersion. (b) Statistics of bond length for SiGe bulk from experiment (Refs. 26 and 27) (symbols) and VFF model (lines with error bars) showing tri-model bond length distribution. VCA bond length is plotted in straight line.

Image of FIG. 2.
FIG. 2.

(Color online) Well thickness and electric field dependence of VS. (a) VS for different well thicknesses at 1 MV/m and 2 MV/m. VS from the experimental data is shown by triangular markers. VS increases with decreasing well thickness. (b) Electric field increases VS for all well widths. Disorder has more effects in high electric fields.

Image of FIG. 3.
FIG. 3.

(Color online) (a) VS as a function of the non-confining lateral simulation domain size for different quantum well thicknesses and applied electric fields. (b) VS standard deviations as a simulation domain size.

Image of FIG. 4.
FIG. 4.

(Color online) Examples of 8 atom SiGe unit cells with 25% Ge used to build ordered SiGe barrier. (a) Atoms are numbered from 0 to 7. (b) Unit cell by replacing 4th and 6th Si atom with Ge. Interface with no Ge-Ge bond. (c) Unit cell by replacing 5th and 6th Si atom with Ge. Interface with no Ge-Ge bond. (d) Unit cell with Ge on atom 2 and 6. All three bond types Si-Si, Si-Ge, and Ge-Ge are present in this unit cell.

Image of FIG. 5.
FIG. 5.

(Color online) Effect of bond types in SiGe. (a) VS for SiGe with regular pattern {4,6} (solid lines) and {5,6} (dashed lines). Valley splitting is overestimated without Ge-Ge bond. (b) VS for SiGe with regular pattern {2,6}. {2,6} barriers mimic fully random barriers. Presence of Ge-Ge bonds bring VS values closer to fully random barrier case.

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/content/aip/journal/apl/100/10/10.1063/1.3692174
2012-03-06
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of interface disorder on valley splitting in SiGe/Si/SiGe quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/10/10.1063/1.3692174
10.1063/1.3692174
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