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(Color online) Temporal evolution of the (a) interface temperatures, (b) depth of solid-liquid transition, and (c) reflectivity, caused by the first laser pulse of 200 mJ/cm2.
(Color online) Melt duration extracted from the TRR spectra (a) and surface reflectivity and RMS roughness (b) of the sample surface for different number of 200 mJ/cm2 pulses. All lines are guide for the eye.
(Color online) Random (1) and  channeling (2) spectra of the untreated structure in comparison to the random (3) and  channeling (4) spectra of a sample treated with 100 pulses of 200 mJ/cm2. The inset shows a magnification of the backscattering signal of Sn.
TEM image (a) taken in tilted geometry to better visualize threading dislocations with a high resolution image of the sample surface (inset) and (b) TOF-SIMS depth profile of the Sn content in the GeSn/v-Ge/Si(001) structure.
(Color online) Raman spectra of the Ge-Ge vibration mode from v-Ge/Sn before and after laser treatment with magnified (×10) Ge-Sn and Sn-Sn modes region.
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