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Artificial DNA nanostructure detection using solution-processed In-Ga-Zn-O thin-film transistors
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10.1063/1.3692587
/content/aip/journal/apl/100/10/10.1063/1.3692587
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/10/10.1063/1.3692587

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic diagram of an artificial DX DNA nanostructure and its immobilization on the IGZO channel surface.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Sequence map of each DX unit tile. The complementary sticky and pairs are shown as Sn and Sn. AFM images of (b) the DX DNA nanostructure on mica; (c) immobilization of DX DNA by DWM onto mica; (c) DX DNA immobilization onto the IGZO channel surface (lower inset). Upper insets are noise-filtered, reconstructed images of (b) and (c), respectively.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Transfer characteristics of the IGZO TFT with and without DX DNA immobilization, and with solvent; (b) variation in μFET , Ion , S.S, and Nmax .

Image of FIG. 4.
FIG. 4.

(Color online) Schematic diagram of the DNA detection mechanism (a) before and (b) after DX DNA immobilization when a positive gate bias was applied.

Tables

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Table I.

Comparison of the electrical characteristics of solution-processed IGZO TFTs with and without DX DNA immobilization.

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/content/aip/journal/apl/100/10/10.1063/1.3692587
2012-03-07
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Artificial DNA nanostructure detection using solution-processed In-Ga-Zn-O thin-film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/10/10.1063/1.3692587
10.1063/1.3692587
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