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A cross-section TEM image (a) and a selected area electron diffraction pattern (b) taken along the zone axis of the ALD grown ZnO layer. The dark field images with diffraction vector g set to (c) and (d), respectively.
Low temperature PL spectra taken at 10 K of the ZnO films grown by (a) ALD and (b) PLD methods. The ALD grown ZnO with 50 nm thickness was deposited at 200 °C and annealed at 800 °C in oxygen for 1.5 h. The PLD grown ZnO with 200 nm thickness was deposited on c-plane sapphire at growth temperature of 600 °C.
(Color online) (a) Temperature dependent PL spectra of the ZnO film taken between 10 and 280 K. (b) The energy versus temperature plot of the BSF and NBE emissions. The dashed lines depict the fitting results to the Varshni’s law.
(Color online) The power dependent PL spectra recorded at 10 K of the ZnO film grown by ALD and annealed at 800 °C. The emission intensity versus the excitation power together with the power law fitting results (dashed lines) of the BSF and NBE emissions are shown in the upper-left inset, and the simple recombination model of the confined indirect excitons in the type-II quantum well is sketched in the upper-right inset.
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