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Photoluminescence associated with basal stacking faults in c-plane ZnO epitaxial film grown by atomic layer deposition
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10.1063/1.3692730
/content/aip/journal/apl/100/10/10.1063/1.3692730
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/10/10.1063/1.3692730
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Figures

Image of FIG. 1.
FIG. 1.

A cross-section TEM image (a) and a selected area electron diffraction pattern (b) taken along the zone axis of the ALD grown ZnO layer. The dark field images with diffraction vector g set to (c) and (d), respectively.

Image of FIG. 2.
FIG. 2.

Low temperature PL spectra taken at 10 K of the ZnO films grown by (a) ALD and (b) PLD methods. The ALD grown ZnO with 50 nm thickness was deposited at 200 °C and annealed at 800 °C in oxygen for 1.5 h. The PLD grown ZnO with 200 nm thickness was deposited on c-plane sapphire at growth temperature of 600  °C.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Temperature dependent PL spectra of the ZnO film taken between 10 and 280 K. (b) The energy versus temperature plot of the BSF and NBE emissions. The dashed lines depict the fitting results to the Varshni’s law.

Image of FIG. 4.
FIG. 4.

(Color online) The power dependent PL spectra recorded at 10 K of the ZnO film grown by ALD and annealed at 800  °C. The emission intensity versus the excitation power together with the power law fitting results (dashed lines) of the BSF and NBE emissions are shown in the upper-left inset, and the simple recombination model of the confined indirect excitons in the type-II quantum well is sketched in the upper-right inset.

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/content/aip/journal/apl/100/10/10.1063/1.3692730
2012-03-08
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence associated with basal stacking faults in c-plane ZnO epitaxial film grown by atomic layer deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/10/10.1063/1.3692730
10.1063/1.3692730
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